Solution cast from toluene

Sample Preparation. Samples for mechanical studies were made by compression molding the polymers at 150°C between Teflon sheets for 15 minutes followed by rapid quenching to room temperature in air. These will be referred to as PQ (press-quenched or simply quenched) samples. The thickness of the PQ samples was around 10 mils (0.25 mm). The thermal history of all of the PQ samples (HBIB, HIBI, and LDPE) were essentially the same. They were used within one week after they were pressed. Samples for morphology, SALS and SEM studies were prepared from toluene solutions. These films were cast on a Teflon sheet at 80 C from a 1% (by weight) solution in toluene. These films were about 5 mils in thickness. When the polymer films had solidified (after 5 hrs), they were stored in a vacuum oven at 80°C for two days to remove residual solvent. These samples will be designated by TOL (solution cast from toluene). 

Here excimer fluorescence from phenyl-phenyl interactions in PS is the main experimental observable. This blend was selected because it has been demonstrated by numerous other techniques that miscible one-phase blends may be prepared by solution casting from toluene solvent. [2,3] Moreover, the blend may be forced to phase separate by thermal means, leading to a two phase system. In addition, we will consider results for blends of poly(2-vinyl naphthalene) (P2VN) with low molecular weight poly(cyclohexyl methacrylate) (PCMA) and polystyrene (PS). 

The PIA-investigations were carried out under dynamic vacuum (p< 10 5 mbar) and at 77 K with films cast from toluene solution onto KBr substrates. For the dispersive method [29, 30] the globar, the KBr-prism premonochromator, and the grating monochromator of a Perkin Elmer 125 lR-spcctrometer were used in the spectral range of 0.25 to 1.24 eV. The pump beam was chopped mechanically... 

Samples of /the polymers for physical evaluation were prepared by film casting from toluene solution at 90°C. and allowing the crystallization to occur by cooling the melt. It was observed that phase separation occurred in the melt in the case of the H2-BIB but not for the H2-BBB. These materials could also be compression molded at 1<40°C., but optimum results appeared to be obtained with the film-cast samples. 

Hourston142) has studied the effect of casting solvents on some physical properties of two SBS copolymers which seem to be Kraton 1101 and 1102. The properties of films cast from cyclohexane solution were found to be independent of the evaporation rate while those of films cast from toluene solution were found to be modified by the evaporation rate. 

Hashimoto T, Nagatoshi K (1974) Domain-boundary structure of styrene-isoprene block copolymer films cast from toluene solutions. Macromolecules 7 364-373... 

High-molecular-weight PM PS is soluble in common solvents and is a good film former. Qualitatively, the overall handling characteristics resemble those of polystyrene. Films of PM PS were cast from toluene solution by a solvent evaporation technique. Other polysilylenes, poly(methylcyclohexylsilylene), poly(methyl-n-pro-pylsilylene), poly(methyl-n-octylsilylene), and a copolymer of dimethyl- and meth-ylphenylsilylene (1 1 ratio) were also prepared by Wurtz coupling by the method of Zhang and West (47). Films of these polymers were also cast from toluene. All polymers form clear transparent colorless films. 

Thin films of a commercially available PS-PI-PS triblock copolymer (e.g. from Aldrich, 17% mol PS) can be prepared on freshly cleaved mica5 by casting from toluene solution, followed by solvent evaporation under ambient conditions, as described in [130]. For this purpose a 30% weight solution of the copolymer is prepared in toluene using a magnetic stirrer. One drop of this freshly prepared... 

Thin films with a thickness of 50 pm of a commercially available PS-PB-PS triblock copolymer (e.g. from BASF, 74% PS, 26% PB) are prepared by solution casting from a 3% solution in toluene onto TEFLON -foil, which is placed in a precleaned petri-dish. The solvent is slowly evaporated over a period of 2 weeks. Residual solvent is then removed and films are annealed under reduced pressure in a vacuum oven at 120°C (48 h). Finally, the films are removed from the support and are uniaxially stretched at a constant strain rate of 0.1 s 1 beyond the yield point at room temperature. ARM investigations are carried out on prestretched samples that are mechanically clamped or fixated by double-sided sticky tape onto the AFM sample holder. 

We here rqx)rt on the effect of the chemical nature of the comonomer, the con sition of the copol3rmer, and the blend concentration on the compatibility of styrene/styrene-deiivative copolsmoer with PVME. The blends were prepared by casting from toluene solution, and the degree of con atibility was examined by the optical clarity, light scattering and FTIR spectroscopy. 

Figure 4.3. Variation of block copolymer morphology with composition (a) SBS-1 (20% butadiene) (b, c) SBS-3 (40 % butadiene) (d, e) SBS-5 (60 % butadiene) Morphology changes from spheres (a) to cylinders (b, c) to alternating lamellae (d, e) as the butadiene content increases from 20 to 60 % from (a) through (e). Polymers cast from toluene solution and stained with osmium tetroxide, so that the polybutadiene phase is black and the polystyrene phase is white. (Matsuo, 1968.)...

When neat 18a is heated in an evacuated sealed tube at 130°C for 1 hour 19a is obtained quantitatively. The polymer 19a is soluble in THF and the sample purified from THF-hexane is a yellow fibrous material with A/vv = 5.2 X 10 and A/n = 3.4 x 10, and readily forms amber, free-standing films by casting from toluene solution. By this ROP method, symmetrically and unsymmetrically substituted poly(ferrocenylsi-poly(ferrocenylsilanes) (19) [71,72] and polysilane-poly(ferrocenylsilane) copolymers, (20) [73] have been prepared. The ROP of [l]ferrocenophane with unsymmetrically methylated cyclopentadienyl rings (21) to investigate the C—Si bond cleavage mechanism in the thermal ROP gives a polymer (22) in which three types of silicon environment exist, showing that... 

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