Simulated profile

Fig. 1 Simulated, profiles across a pipe in the tangential projection technique and the results of different filters for determination of the projected wall thickness...

LADM Is also shown In Figure 4. It agrees with the simulation profile almost within the limits of the statistical uncertainty. 

In Figure 10, we present flow velocity predictions of the high density approximation, Equations 32 - 33, 38 and 39, of Davis extension of Enskog s theory to flow In strongly Inhomogeneous fluids (1 L). The velocity profile predicted In this way Is also plotted In Figure 10. The predicted profile, the simulated profile, and the profile predicted from the LADM are quite similar. 

The optimal feeding profile based on the model is shown in Figure 3 and the simulation profiles are shown in Figure 4 for initial substrate concentrations of 90 mM benzaldehyde and 108 mM sodium pyruvate, and initial PDC activity of 4.0 U ml carboligase. Feeding was programmed at hourly intervals and the initial reaction volume would increase by 50% by the end of the simulated biotransformation. 

Simulation profile of fed batch PAC biotransformation kinetics at 6°C with initial PDC activity of 4.0 U carboligase ml, 90 mM benzaldehyde and 108 mM sodium pyruvate. Feeding was performed hourly as illustrated in Fig. 3 and the initial reaction volume of 30 ml (which would be used experimentally) increased to 45 ml at the end of reaction. 

Using the same initial conditions as for the simulation profiles, an experimental biotransformation was commenced with the intention of following the same optimal benzaldehyde/pyruvate feeding program. However it was quickly found that the rate of PAC production was slower than expected, and a pragmatic approach was taken in the experiment to maintain benzaldehyde concentration close to its simulation value (90 mM) by reducing feed rates throughout the biotransformation. 

FIG. 43. Measured and simulated thickness profiles on the substrate behind the slit for a film deposited under discharge conditions that typically yield good material properties (a) along the length of the slit, (b) across the slit. The vertical dashed-dotted lines indicate the boundaries of the apertures. The dotted lines represent the measured profiles, the solid lines the simulated profiles. The dashed lines are the simulated deposition profiles of the radicals. (From E. A. G. Hamers. Ph.D. Thesis, Universiteit Utrecht, Utrecht, the Netherlands, 1998. with permission.)... 

Figure 9.2 Simulated axial pressure and temperature for the baseline process at 10.3 kg/h and a screw speed of 28 rpm. The solid lines are for the simulated profiles. The dashed line is the estimated pressure. The simulation predicts a discharge pressure and temperature of 5.8 MPa and 273 °C, respectively...

Fig. 12.7 Profiles of means (a,b) and standard deviations (c,d) of the bromacil concentrations at four different time points. Solid curves denote simulated profiles obtained from the advection-dispersion equation (a,c) and the mobile-immobile model (b,d). The different symbols denote measured profiles at different times. Reprinted from Russo D, Toiber-Yasur I, Laufer A, Yaron B (1998) Numerical analysis of field scale transport of bromacil. Adv Water Resour 21 637-647. Copyright 1998 with permission of Elsevier...

In the case of evaporation kinetics, continuum theory predicts, e.g., that the amplitude of the wire decays with f, with w= 1/5. Simulations, for rather small systems, show strong deviations. The simulated profile shapes also differ appreciably from the predicted ones, even when conservation of mass at the surface is taken into account, especially near the top. The differences may be traced back to the fact that the mo-... 

Figure 4.12 Doping profiles of 60 keV Al ions implanted in 4H-SiC with different alignments of the beam direction with respect to the crystalline network. Parts (a) and (b) refer to wafers and part (c) refers to the-20 ones. The beam-to-crystal alignment per profile is given in the inset of each picture. Parts (a) and (c) are SIMS measurements and part (b) is an MC-BCA simulated profile. The concentration scale is normalized to the implantation dose. (From [23]. 2003 American Institute of Physics. Reprinted with permission.)...

Figure 4.24 N and B coimplanted in 4H-SiC and annealed in an inductively heated furnace at 1,600°C for 10 minutes within a SiC crucible and high-purity Ar atmosphere, (a) Comparison between as-implanted and annealed N and B profiles, (b) Comparison between the N annealed and simulated profile these were computed under the hypothesis of an N FED diffusion. (From [91]. 2002 Material Science Forum. Reprinted with permission.)...

We must first set up the analysis. Select PSpice and then New Simulation Profile from the menus ... 

This selection specifies that only the Bias Point simulation will run. We do not need to specify any output file options because we will be displaying the results on the schematic. Click the OK button to save the simulation profile and return to the circuit. 

We must now set up a Bias Point simulation. Click on the New Simulation Profile button 1=1 to create a new profile (in the last section, we selected PSpice and then New Simulation Profile from the menus) ... 

Specify a name for the simulation profile and then click the Create button ... 

In the last simulation we found the diode voltage and current at the default temperature of 25°C. Suppose we want to simulate the circuit at a different temperature This can easily be done by selecting the temperature option in the simulation profile. We will continue with the circuit of the previous simulation-... 

We now wish to edit the simulation profile. Since we are using a previously created profile, we need to open the profile rather than create a new profile. Select PSpice and then Edit Simulation Profile from the Capture menus to edit the existing profile ... 

Set up the DC Bias simulation (select PSpice and then New Simulation Profile) and then run PSpice (PSpice and then Run). When the simulation is complete, display the node voltage at Voc on the schematic ... 

The question we will ask is How does the voltage at VO vary as VX is raised from 0 to 25 volts We will also view some of the currents through the components. Since this is a DC Sweep, all capacitors are assumed to be open circuits, and all inductors are assumed to be short circuits. We will now set up the DC Sweep. From the menu bar select PSpice and then New Simulation Profile ... 

We will now set up the DC Sweep to sweep the parameter value. Select PSpice and then New Simulation Profile. Choose a name for the profile and then click the Create button. Select the DC Sweep Analysis type and fill in the dialog box as shown ... 

Since we are working with the previous example, a simulation profile has already been created and we just need to modify it. To edit the existing profile, select PSpice and then Edit Simulation Profile ... 

We must now set up the Parametric Sweep. If you are continuing from the previous example, you will already have created a simulation profile for the DC Sweep. To open the profile, select PSpice and then Edit Simulation Profile from the menus. If you started this example as a new circuit, select PSpice and then New Simulation Profile, specify a name for the new profile, and then click the Create button. Set up a DC Sweep as shown below. Using either procedure, you should have the screen below ... 

The next thing we would like to do is to see how the Hfe versus Ic curve is affected for different values of DC collector-emitter voltage. The curve in the previous example was generated at VCe = 5 V. We would now like to generate four curves at different values of Vce and plot them all on the same graph. We will generate curves at Vce = 2 V, 5 V, 10 V, and 15 V. We will use the same circuit and simulation profile as in the previous section ... 

Since we have already created a simulation profile from the previous example, we do not need to create a new profile. To open the previous profile, select PSpice and then Edit Simulation PlOfllB from the Capture menus ... 

At low frequencies the capacitor is an open circuit and V0 should equal Vi. At high frequencies the capacitor becomes a short, and the gain goes toward zero. The 3 dB frequency of the circuit is to = 1/RC = 1,000 rad/s = 159 Hz. We will set up an AC Sweep to sweep the frequency from 1 Hz to 10 kHz. Select PSplce and then New Simulation Profile from the Capture menus and then enter a name for the profile and click the Create button. Select the AC Sweep/Nolse Analysis type and fill in the parameters as shown in the AC Sweep dialog box below ... 

Set up an AC Sweep (PSpice, New Simulation Profile, AC Sweep/Noise) to sweep frequencies from 1 Hz to 1 MHz at 100 points per decade. Run PSpice (PSpice, Run). When Probe runs, add the trace V(l) / I (I test). Remember that voltage divided by current is impedance. We are dividing the voltage between nodes 1 and 0 by the current flowing into and out of those nodes. This is the impedance between those nodes. You will see this trace ... 

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