SAMPLE resist profile simulations

Figure 47, SAMPLE generated profile simulations in AZ1350J resist exposed at 436 nm on an index matched substrate. The mask edge is at 0.75um on the horizontal scale. The unbleachable optical absorbance (A) was varied from the actual value at 436 nm, 0.08 to 0.43. The dose was adjusted to develop each case to dimension (l.5um space) at constant development time. As A increases, all other factors being constant, the dose required to open the line increases and the resist profile becomes...

Figure 3.17. Computer-simulated resist profiles (SAMPLE). Operating input parameters include matched substrate, AZ1350J resist, 4358 A, 90 mjlcm, NA = 0.35, a = 9.99, defocus 0.0, development 80 s. The open image (B = 0.058) simulates AZ1350J performance. The shallow profile (B = 1.96) was generated from identical input parameters with the exception that the un-bleachahle absorbance (B) was adjusted to the value corresponding to the absorbance of 1 xm of novolac at 254 nm. (Reproduced with permission from reference 37. Copyright 1981 Institute of Electrical and Electronics Engineers.]...

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