Profile simulations, resist

Figure 47, SAMPLE generated profile simulations in AZ1350J resist exposed at 436 nm on an index matched substrate. The mask edge is at 0.75um on the horizontal scale. The unbleachable optical absorbance (A) was varied from the actual value at 436 nm, 0.08 to 0.43. The dose was adjusted to develop each case to dimension (l.5um space) at constant development time. As A increases, all other factors being constant, the dose required to open the line increases and the resist profile becomes...

Figure 3.17. Computer-simulated resist profiles (SAMPLE). Operating input parameters include matched substrate, AZ1350J resist, 4358 A, 90 mjlcm, NA = 0.35, a = 9.99, defocus 0.0, development 80 s. The open image (B = 0.058) simulates AZ1350J performance. The shallow profile (B = 1.96) was generated from identical input parameters with the exception that the un-bleachahle absorbance (B) was adjusted to the value corresponding to the absorbance of 1 xm of novolac at 254 nm. (Reproduced with permission from reference 37. Copyright 1981 Institute of Electrical and Electronics Engineers.]...

Since each resistoT has 1 A of current flowing through it, the voltage across the resistor is numerically equal to the resistance. We will set up a DC Sweep to vary the temperature. Select PSpice and then New Simulation Profile, give the profile a name, and then click the Create button. Select an Analysis type of DC Sweep. Fill in the dialog box as shown ... 

The first and second pair of tubes were connected to a U-shaped reactor by the silicon reaction zone. In the center of the tubes, silicon slabs served as a recuperation zone for the fluids entering and leaving the system. Their impressive efficiency was demonstrated by CFD simulations revealing the highest heat transfer resistance in the fluid itself and thus temperature profiles across the width of the ducts (see Figure 2.39). 

There is a striking similarity between the experimentally observed and the theoretically calculated profiles, and all four characteristic features occur in both. The calculated location of the minimum, which mainly depends on the vacancy mobility, is close to the location observed in the experiment. The computed temperature dependence of the depth of the minimum corresponds with the results of the measurement. Obviously, the stoichiometry polarization model of resistance degradation correctly predicts the conductivity variations. In particular the almost quantitative agreement of the very characteristic shape of the conductivity distribution proves the validity of the existing model described above. It should be noted that in the calculations only the hole mobility is chosen such that the theoretically and the experimentally observed depth of the minimum is similar, but all other parameters used in the simulation are taken from literature [77, 336, 338],... 

Simulation of Resist Profiles for 0.5-jiim Photolith( raphy at 248 nm... 

Only few studies have dealt with the heat transfer between monolith channels in catalytic fuel combustion and the effect of this heal transfer on temperature profiles and thermal stresses [63,64]. Furuya et al. [64] used simulation of the thermal stress caused by radial gas temperature inlet variations and developed monolith designs with improved resistance to such stress. Worth et al [63] showed the importance of the conductivity of the monolith material to the radial temperature profiles in monolith combustion catalysts. Metal monoliths, with higher thermal conductivity, showed much flatter temperature profiles than ceramic monoliths, indicating that thermal stress and nsk for hot spots will be less of a problem for the former than for the latter. 

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