Silicones molecular devices from

While the discussion in this chapter has focused on molecular layers on single crystal silicon surfaces, the attachment chemistries discussed here could easily be applied to functionalize silicon nanowires or nanoparticles. Silicon nanowires have been shown to exhibit interesting electrical transport characteristics and have been used to fabricate nanoscale pn junctions [95], field effect transistors [96] and biochemical sensors [97-100]. However, all these interesting phenomena have been reported on oxidized silicon nanowires. It is likely that better control over the surface properties, as could be achieved by employing some of the chemistry discussed here, could significantly improve the performance of these nanowire-based devices. From another perspective, silicon nanowires could prove extremely... 

Since 2004 [183], graphene research has evolved from a heavily theoretical and fundamental field into a variety of research areas [301]. Its electrical, magnetic, physical-mechanical, and chemical properties position it as the most promising material for molecular electronic and optoelectronic applications, possibly replacing the currently used silicon and metal oxide based devices. Nonetheless, further research is essential in order to control easily such properties and construct devices with specific and novel architectures to explore in depth all of these exciting properties, as well as to achieve the synthesis of large-scale, size- and layer-count controlled graphene. 

FIGURE 3.6. (a) Cross-sectional schematics of a silicon wafer with a nanopore etched through a suspended silicon nitride membrance. SAM is formed between sandwiched Au eletrodes in the pore area (circled), (b) I(V) characteristics of a Au-2 -amino-4-ethynylphenyl-4-ethynylphenyl-5 -nitro-1 -benzenethiolate-Au (chemical structure shown below) molecular junction device at 60 K. The peak current density is 50 A/cm2, the NDR is 2400 pQ. cm2, the peak-to-valley ratio is 1030 1. [Adapted from Ref.30 Chen el al., Science 286, 1550-1552 (1999).]... 

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