Silicon thin film processing

Its thin-film processing is compatible with silicon technology. 

Kuo, Y. (Editor). 2004. Thin-Film Transistors Materials and Processes, Amorphous Silicon Thin-Film Transistors, Polycrystalline Silicon Thin Transistors. Kluwer, New York. 

Fig. 17.3 Temperature and flow-rate dependence of silicon thin-film growth for a silane CVD process. The left-hand panel shows the temperature dependence for a fixed inlet flow rate. The right-hand panel shows normalized growth rate as a function of inlet velocity for three different surface temperatures. The actual growth rate at U = 10 cm/s is stated parenthetically under the temperature call out.

Active-matrix displays differ from the aforementioned displays in that they have a switch incorporated into each pixel (Tsukada 2000). This removes the limitations encountered in passive matrix displays but requires more sophisticated processing equipment to be used. The dominant pixel switch technology is the amorphous silicon thin-film transistor (TFT) on glass (Tsukada 2000), although other technology... 

Y. Kuo in Thin Film Transistors - Materials and Processes Volume 1 Amorphous Silicon Thin Film Transistors, Kluwer Academic Publishers, 2004. 

Polycrystalline Silicon Thin-Films Formed by the Aluminum-Induced Layer Exchange (ALILE) Process... 

A thin-film electrode is relatively dense, as the metallic film does not have the electrocatalytic properties that a porous electrode has. Therefore, in many instances, the surface of the thin film is chemically or electrochemically modified to enhance its electrocatalytic activity. For instance, thin platinum film electrodes can be platinized electrochemically forming a porous platinum black layer. This platinum black layer is electrocatalytically more active than the thin platinum film. Thin-film processes are more capital and labor intensive and the process is more complicated than thick-film processes. Thin-film deposition is also a batch process which may produce sensors of limited numbers of silicon substrates. This is very desirable in prototype development, for it allows modification on prototypes with minimum cost. 

Dubbe A (2003) Fundamenteils of solid state ionic micro gas sensors. Sens Actuators B 88 138-148 Glocker DA, Shah 1 (eds) (1995) Handbook of thin film process technology. Institute of Physics, Bristol, UK Hecht G, Richter F, Heihn J (eds) (1994) Thin films. DGM InformationgesseUschaft, Oberursel, Germany Hitchman ML, Jensen KF (1993) CVD principles tmd applications. Academic, San Diego, CA Hubbard KJ, Schlom DG (1996) Thermodyntunic stabdity of binary oxides in contad with silicon. J Mater Res 11 2757-2776... 

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