Aluminum-induced layer exchange

Polycrystalline Silicon Thin-Films Formed by the Aluminum-Induced Layer Exchange (ALILE) Process... 

Fig. 12.1. Schematic illustration of the aluminum-induced layer exchange (ALILE) process. During an annealing step below the eutectic temperature of the Al/Si system, the initial glass/Al/a-Si stack is transformed into a glass/poly-Si/Al(+Si) stack. The permeable membrane between the layers (black line) stays in place during the ALILE process...

Fig. 12.2. Main steps of the aluminum-induced layer exchange (ALILIE) process (a glass/Al/a-Si stack is shown) (1) Dissociation of a-Si and diffusion of Si into the A1 layer (2) Nucleation of Si within the A1 layer (3) Lateral diffusion of Si within the A1 layer towards existing Si grains (4) Lateral Si grain growth (5) Displacement of A1...

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