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Silicon melting point

The silicon melting point (but lower than the titanium melting point), for combustion of Ti-I-Si, 5Ti-l-4Si and 3Ti+Si mixtures... [Pg.154]

At the silicon melting point, this should result in carbon concentration of 9.1 x 1018cm-3. As carbon solubility in solid silicon is 3.5 x 1017cm 3 at the melting point of Si, the high carbon solubility in the liquid silicon should result in carbon supersaturated solidified silicon or the formation of SiC, either residually in the melt or incorporated in the silicon crystal. [Pg.107]

FIGURE 5 Time-temperature plot of CFLPE under isothermal conditions Tm - silicon melting point,... [Pg.220]

Silicon is soluble in aluminum in the solid state to a maximum of 1.62 wt % at 577°C (2). It is soluble in silver, gold, and 2inc at temperatures above their melting points. Phase diagrams of systems containing silicides are available (2,3). [Pg.535]

There are, of course, many more ceramics available than those listed here alumina is available in many densities, silicon carbide in many qualities. As before, the structure-insensitive properties (density, modulus and melting point) depend little on quality -they do not vary by more than 10%. But the structure-sensitive properties (fracture toughness, modulus of rupture and some thermal properties including expansion) are much more variable. For these, it is essential to consult manufacturers data sheets or conduct your own tests. [Pg.166]

The rejected silicon accumulates in a layer just ahead of the growing crystals, and lowers the melting point of the liquid there. That slows down the solidification, because more heat has to be removed to get the liquid in this layer to freeze. But suppose a protrusion or bump on the solid (Al) pokes through the layer (Fig. A1.33). It finds itself in liquid which is not enriched with silicon, and can solidify. So the bump, if it forms, is unstable and grows rapidly. Then the (Al) will grow, not as a sphere, but in a branched shape called a dendrite. Many alloys show primary dendrites (Fig. A1.34) and the eutectic, if it forms, fills in the gaps between the branches. [Pg.353]

It has been shown" that branched polymers have lower melting points and viscosities than linear polymers of the same molecular weight. The viscosity of the silicone fluids is much less affected by temperature than with the corresponding paraffins (see Figure 29.2). [Pg.825]

Attention has been given for some time to the use of lithium alloys as an alternative to elemental lithium. Groups working on batteries with molten salt electrolytes that operate at temperatures of 400-450 °C, well above the melting point of lithium, were especially interested in this possibility. Two major directions evolved. One involved the use of lithium-aluminium alloys [5, 6], whereas another was concerned with lithium-silicon alloys [7-9]. [Pg.361]

FIGURE 1.59 Boron (top) and silicon (bottom) have a diagonal relationship. Both are brittle solids with high melting points. They also show a number of chemical similarities. [Pg.171]

The nitrides reviewed here are those which are commonly produced by CVD. They are similar in many respects to the carbides reviewed in Ch. 9. They are hard and wear-resistant and have high melting points and good chemical resistance. They include several of the refractory-metal (interstitial) nitrides and three covalent nitrides those of aluminum, boron, and silicon. Most are important industrial materials and have a number of major applications in cutting and grinding tools, wear surfaces, semiconductors, and others. Their development is proceeding at a rapid pace and CVD is a major factor in their growth. [Pg.265]

The process competes with the traditional method of fiber production in which the precursor material is melted, usually in an arc furnace, then drawn through spinnerets and spun or impinged by high pressure air. The melt-spin process is not well suited to materials with high melting points such as zirconia, silicon carbide, or pure alumina. [Pg.465]

Kira reported the synthesis of a derivative of spiro[2.2]pentasiladiene 101 [5, 16], The spiropentadisilene derivative is stable with a melting point of 216-218 °C, whereas spiropentadiene 98 decomposes even below -100°C [81], The carbon congeners are more strained with introdnction of the double bond(s), while the silicon derivatives possess almost the same SE (Scheme 34) [5],... [Pg.287]

In sharp contrast to molecular solids, network solids have very high melting points. Compare the behavior of phosphorus and silicon, third-row neighbors in the periodic table. As listed in Table 11-2. phosphorus melts at 317 K, but silicon melts at 1683 K. Phosphorus is a molecular solid that contains individual P4 molecules, but silicon is a network solid in which covalent bonds among Si atoms connect all the atoms. The vast array of covalent bonds In a network solid makes the entire stmcture behave as one giant molecule. ... [Pg.777]


See other pages where Silicon melting point is mentioned: [Pg.432]    [Pg.5]    [Pg.432]    [Pg.5]    [Pg.130]    [Pg.26]    [Pg.159]    [Pg.201]    [Pg.4]    [Pg.226]    [Pg.52]    [Pg.390]    [Pg.978]    [Pg.217]    [Pg.96]    [Pg.565]    [Pg.100]    [Pg.774]    [Pg.342]    [Pg.102]    [Pg.810]    [Pg.268]    [Pg.361]    [Pg.444]    [Pg.194]    [Pg.421]    [Pg.422]    [Pg.46]    [Pg.84]    [Pg.86]    [Pg.778]    [Pg.786]    [Pg.797]    [Pg.797]    [Pg.311]    [Pg.588]    [Pg.72]    [Pg.395]   
See also in sourсe #XX -- [ Pg.10 ]

See also in sourсe #XX -- [ Pg.433 ]

See also in sourсe #XX -- [ Pg.433 ]

See also in sourсe #XX -- [ Pg.434 ]

See also in sourсe #XX -- [ Pg.447 ]




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