Silicon Carbon Nitride

This chapter examines some potential structures that have been proposed for different phases of carbon-nitride and also the tertiary material silicon-carbon-nitride. First we briefly examine some basic modeling procedures that have been employed to date when investigating these materials and then discuss properties of the predicted structures. 

Mohammad M, Dew S, Evoy S et al (2011) Fabrication of sub-10 nm silicon carbon nitride resonators using a hydrogen silsesquioxane mask patterned by electron beam lithography. Microelectron Eng 88 2338-2341... 

A. Y. Liu and M. L. Cohen, Structural Properties and Electronic Structure of Low-Compressibility Materials P-silicon Nitride and Hypothetical Carbon Nitride (P-C3N4), Phys. Rev. B, 41(15), 10727-34 (1990). 

In some instances, subtle changes in the precursor architecture can change the composition and microstructure of the final pyrolysis product. For example, pyrolysis of —[MeHSiNH] — leads to amorphous, silicon carbide nitride (SiCN) solid solutions at >1000°C (see SiCN section). At ca 1500 °C, these material transform to SisN SiC nanocomposites, of interest because they undergo superplastic deformation20. In contrast, chemically identical but isostructural — [F SiNMe] — transforms to Si3N4/carbon nanocomposites on heating, as discussed in more detail below21. 

Polycrystalline Amorphous Epitaxial silicon Carbon fiber Filaments Carbon nanotubes Silicon dioxide Tungsten Silicon nitride Titanium nitride... 

As already mentioned, synthesis of multinary silicon boron nitrides or carbon nitrides cannot be achieved via the well-known powder route, including mixing, milling, and sintering of binary nitride/carbide powders, because the interdiffiision of the covalent nitrides, and carbides, proceeds... 

Volume 1 starts with an introduction into novel ultra hard ceramics including diamond and diamond-like carbon, carbon nitrides and silicon nitrides as well as boron containing carbides, nitrides and carbonitrides. Here we wish to recognize the great fundamental and technological challenge of developing new superhard... 

SILICON NITRIDE, OXYNITRIDE, AND CARBON NITRIDE LAYERS... 

Superhard compounds are obviously formed by a combination of the low atomic number elements boron, carbon, silicon, and nitrogen. Carbon-carbon as diamond, boron-nitrogen as cubic boron nitride, boron-carbon as boron carbide, and silicon-carbon as silicon carbide, belong to the hardest materials hitherto known. Because of their extreme properties and the variety of present and potential commercial applications, silicon carbide (SiC) and boron carbide (B4C) are, besides tungsten carbide-based hard metals, considered by many as the most important carbide materials. 

In this process, the substrate is placed inside a reactor supplied by different gases [21], The principle of the process is that a chemical reaction takes place between the source gases producing a solid material which condenses on all surfaces inside the reactor. CVD is widely used in the semiconductor industry to deposit various materials such as polycrystalline, amorphous, and epitaxial silicon, carbon fiber, filaments, carbon nanotubes, Si02, silicon-germanium, tungsten, silicon nitride, silicon oxynitride, titanium nitride, and various high-k dielectrics. 

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