Silicides reactions with

Niobium silicide (NbSi3) is deposited by the silane reaction with niobium chloride. It has an A15 structure and is a superconductor. 

Metal and polysilicon films are formed by a chemical-vapor deposition process using organometallic gases that react at the surface of the IC structure. Various metal silicide films may also be deposited in this manner by reaction with the surface of the silicon wafer to form metal silicides. Glass and pol3uner films are deposited or spin cast or both, as are photoresist films (those of a photosensitive material). This process is accomplished by applying a liquid polymer onto a rapidly rotating wafer. The exact method used varies from manufacturer to manufacturer and usually remains proprietary. 

Lewis base adducts, 25 64, 68-69 metal exchange reactions, 25 57 NMR spectra, 25 93-95 pyrolysis, 25 107 silicide formation, 25 110 tetracarbonylsilyl hydride reaction with isoprene, 25 75 reductive elimination, 25 81 site, formation, ribonucleotide reductase, 43 372-375... 

Trisilane (Trisilicopropane, Trisilicon octahy-dride, Silicopropane or Trisilicane). Si3H8 mw 92.33 colorl liq mp —117.4° bp 52.9° d 0.743g/cc at 0°. Sol in org solvents. Decomps in w expl reaction with CG4 and chlf, Prepn is by sepn of mixed silanes obtd by the reaction of Mg silicide with HC1 or by the conversion of silane to higher mw silanes in a silent electr discharge app (Ref 36). CA Registry No [7783-26-8]... 

Ni, Pd and Pt do not react with SiOj, which is in accordance with thermodynamic calculations showing that metals with electronegativities <1.5 react with the SiOj to form a silicide. The silicide phase is also more metal rich than the one found during reaction with a Si substrate. 

Ml) as Pd, Pt, Ni or Co, which form metal-rich silicides at low T, or whether they are such metals (M ) as V, Cr, Zr, Mo, Ta and W, which form disilicides as a first phase at high T (see Table 3) or a combination of both. For the latter, the subsequent reaction with Si depends on whether the low-T silicide-forming metal or the high-T disilicide-forming metal is in contact with the Si. Examples of the four Si reaction categories are shown schematically in Fig. 4. 

As can be concluded from Fig. 4, the initial reactivity of the surface of Sited, is very high The relevant copper species present, possibly copper chlorides, which can easily form copper-silicidic phases by reaction with silicon, can easily attack the whole of the surface and react with surface silicon, resulting in Cu-Si species and finally metallic copper, e g, [26]. Due to this very fast formation of catalytically active Cu-Si species and of precursors thereof, the reaction becomes very fast already after a short time. But, on the other hand, this overall attack on the silicon surface gives copper species the possibility to be deposited practically over the whole of the silicon grain This means in terms of our model of catalytically active Cu-Si surface species, explained in the first section of this paper, that there is a lack of still free silicon surface area, which is needed in order to form the active "two-dimensional" Cu-Si species. The surface is simply blocked by thick copper-containing layers. As consequence, the reaction goes down after a short time and the contact mass reaches only low stationary activity. 

AHf of metal silicides 5.10.3.2.1 Thiocarbonyl complexes formation 5.8.2.13.1 Tin amides reactions with metal carbonyls 5.S.5.4.3 Tin azides reactions with... 

TELLURIUM (13494-80-9) Finely divided powder or dust may be flammable and explosive. Violent reaction with strong oxidizers, bromine pentafluoride, halogens, interhalogens, iodine pentafluoride, hexalithium disilicide, lithium silicide, nitrosyl fluoride, oxygen difluoride, sodium peroxide, sulfur, zinc. Incompatible with cadmium, cesium, hafnium, strong bases, chemically active metals, iodic acid, iodine oxide, lead chlorite, lead oxide, mercury oxides, nitric acid, peroxyformic acid, platinum, silver bromate/iodate/ fluoride, nitryl fluoride, sodium nitrate. 

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