Silane, vapor phase deposition

A range of procedures have been described for the silanization of glass, including approaches employing both elevated and room-temperature organic phase, aqueous phase, vapor phase, and chemical vapor deposition of the silane. However, little has been published with regard to the rehability and... 

Modification after drying typically involves deposition of chemical components from the gas phase by a process of chemical vapor infiltration. Thus, at temperatures >500°C, treatment of aerogels with acetylene leads to homogeneously deposited carbon, treatment with silanes leads to deposition of elemental Si, and treatment with ferrocene or iron carbonyls leads to iron and iron oxides (12). 

Films of tetrathia[7]helicene 1 and tetrathia[7]helicene 72 were deposited at 25 °C under vapor-phase conditions on a bare silica surface (Si02), and on a silanized one with hexamethyldisilazane (HMDS) (20090E1511). AFM... 

The semiconductor insulator interface is the primary factor that determines the field-effect mobility of charge carriers in an organic field effect transistor (OFET). Vapor phase or solution based treatments with an alkyl silane or silazine group forms a self-assembled monolayer on the surface of the insulator. Such treatments prior to the deposition of the semiconductor reduces the surface energy which improves the... 

Chemical vapor deposition (CVD) The deposition of atoms or molecules by the reduction or decomposition of a chemical vapor species (precursor vapor) that contains the material to be deposited. Example Silicon (Si) from silane (SiH4). See also Vapor phase epitaxy (VPE) Decomposition reaction (CVD) Reduction reaction (CVD) Disproportionation reaction (CVD). 

Koh J, Ferlauto AS, Rovira PI, Wronski CR, Collins RW (1999) Evolutionary phase diagram for plasma enhanced chemical vapor deposition of silicon thin films from hydrogen diluted silane. Appl Phys Lett 75 2286-2289... 

W.G. Breiland, M.E. Coltrin, and P. Ho. Comparisons between a Gas-Phase Model of Silane Chemical Vapor Deposition and Laser-Diagnostic Measurements. J. Appl. Phys., 59 3267-3273,1986. 

The manufacture of cubic p-SiC, which is favored at temperatures below 2000°C, or mixtures of a- and p-SiC is carried out by deposition from the gas phase (Chemical Vapor Deposition). p-SiC powder with good sintering properties and small crystallite size is e.g. obtained by the thermal decomposition of alkyl silanes or alkyl dichlorosilanes in plasmas or flow reactors at temperatures above 1000°C ... 

Diborane is commonly used in the electronics industry for semiconductor doping by mixing small concentrations with silane in the gas phase prior to decomposition. When reacted with silane and oxygen, diborane also produces the cladding layers of wave guides for fiber optics by chemical vapor deposition. 

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