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Si-OH bonds

Dehydration or Chemical Stabilization. The removal of surface silanol (Si—OH) bonds from the pore network results in a chemically stable ultraporous soHd (step F, Fig. 1). Porous gel—siHca made in this manner by method 3 is optically transparent, having both interconnected porosity and sufficient strength to be used as unique optical components when impregnated with optically active polymers, such as fiuors, wavelength shifters, dyes, or nonlinear polymers (3,23). [Pg.251]

In some cases photoadsorption is masked by photodesorption. An example is provided by the photoadsorption of oxygen on Si02 first observed by Solonitzin (21, 22). In this case illumination apparently leads to photodisruption of the Si-OH bond and to desorption of the OH groups... [Pg.172]

For oxide CMP, the purpose of the solution is two fold. First, water weakens the Si—O bond in a silicon dioxide film and softens the surface as it becomes hydrated with Si—OH bonds [6,7]. Figure 10 shows the reaction mechanism. Second, the solution is to provide a basic environment (pH > 10), which accelerates the hydration rate. An environment with high pH values will allow the polishing-induced reaction to be further accelerated because the surface Si(OH) species will be partially dissolved into water. In the meantime, the zeta potential of silica increases with increasing pH values. At high zeta potentials silica particles will repel each other, whereby a better-suspended slurry is formed. [Pg.146]

Because of the polarization by the —Si—OH bond, the —Si—Si—back bonds are weakened and attacked by H2O molecules to generate new — Si—H and—Si—OH terminations. Again, the Si—H are oxidized into silanol, and simultaneously these silanol groups are condensed into siloxane bridges ... [Pg.321]

A very interesting reaction occurs with water. At first, the Si—I bond is hydrolyzed and Si-OH bonds are formed. Since silanol groups are not stable, water is eliminated and a condensation polymer results. This compound is yellow and emits a strong yellow Fluorescence. Siloxene, a similarly constructed compound gives the same color effect, which is explained in a later chapter. [Pg.83]

Most Si—OH bond lengths fall in the range 1.64 0.03 A228,229, i.e. somewhat shorter than might be expected from the corrected sum of the covalent radii for O and Si. The strength and shortness of the Si—O bond has been attributed to its high polarity221,226,230. Tabulated data for the structures of many silanols and polysilanols can be found in Reference 1. [Pg.724]

Silanol. A monohydroxy derivative of a silane a compound of silicon containing a single Si—OH bond. [Pg.121]

Summary Thermoanalytical and spectroscopic ( Si NMR and IR) methods were used to characterize the changes of structure of silicon resins when heated up to 700 °C. Building groups with unreacted Si-OH bonds perform a postcondensation to Si-O-Si bonds at 250 °C. At about 500 °C, Si-C bonds cleave by an oxidative conversion to Si-OH. At the end the silicon resin is converted to an aerosil like material. [Pg.697]

Fig. 10. High-iesoMion 72 Ax62 A in-sitn STM image of n-Si(lll) in NaOH after a short polarization period close to the rest potential. Imaging was performed at t/j = -1.5 V/SCE. The surface is mostly H-terminated but atomic-size white spots correspond to isolated Si-OH bonds (P. Allongue, unpublished image). Fig. 10. High-iesoMion 72 Ax62 A in-sitn STM image of n-Si(lll) in NaOH after a short polarization period close to the rest potential. Imaging was performed at t/j = -1.5 V/SCE. The surface is mostly H-terminated but atomic-size white spots correspond to isolated Si-OH bonds (P. Allongue, unpublished image).
Originally, the main reaction in PCS oxidation was believed to be the formation of Si-O-Si bonds by the oxidation of Si-H groups, which are the most active functional groups (equation 2). Figures 5 and 8 show that A2100 (Si-H) rapidly decreased with oxidation, but A 3400/A 2950 (Si-OH bonds) increased notably. However, A1020/A 330 (Si-O-Si) increased slowly. [Pg.631]

With large distances between three-dimensional Si-H groups, oxidation results in Si-OH bond formation (equation 4). [Pg.632]

Figure 9 shows that A1260 decreased as wlw increased. This result is explained by the disappearance of Si-CH3 groups as they are oxidized (equation 5) to form Si-OH bonds and formaldehyde. This reaction was proven by the presence of formaldehyde, which was detected only at >180 °C in the exhaust gas of the furnace by the phenylhydrazine method during curing. [Pg.632]

The main reaction of PCS oxidation by heating in a nitrogen atmosphere involves the formation of Si-O-Si by a dehydration condensation reaction of Si-OH bonds (equation 3). This reaction can be deduced from the fact that the number of Si-OH bonds decreases notably compared with those of other groups. The decrease in Si-H Awlw < 6.2%) and Si-CH3 bonds at >300 °C may be explained by equations 6 and 7. At >400 C, a decrease in Si-H and Si-CH3 bonds was noted for every PCS sample. This finding suggests that Si-CH2-Si bond formation from Si-H and Si-CH3 proceeds by equation 8. [Pg.636]

After the sol-gel process, the preformed helical silica network has embedded probably enough chiral information to be amplified (reinforced) irreversibly during the calcination process when almost total condensation of Si-OH bonds occurs. By calcinations of the hybrid material, the templating twisted G-quadruplex architectures are eliminated, and inorganic silica anisotropic microsprings are obtained. They present the same helical topology, without inversion inside the helix. These objects have a different helical pitch, which depends strongly on... [Pg.1703]

Reaction (2.13a) has the smallest activation energy, meaning that the Si-OH bond is highly unstable in HF solutions and if present will be quickly replaced by other bonds. Reaction (2.13b), which results in hydrogen termination, is kinetically more favorable than reactions (2.13c) and (2.13d). This means that fluoride termination tends to be replaced by hydrogen termination, which, whether in the form of mono-, di-, or trihydride, is kinetically more stable. Similar to HF, the attack by F and HFz leading to hydrogen termination has also been proposed. ... [Pg.60]

The hydrogen adsorption onto a silicon atom is a reduction process since the valence of the hydrogen atom is changed from +1 to 0. It occurs when the back bond of Si-SiF or Si-SiOH is broken by reacting with H2O or HF. Transfer of one electron from the Si-OH bond to the hydrogen of the Si-H bond must then occur as illustrated in Fig. 5.69. An important feature of this process is that no carriers from the solid are involved, and thus this reaction is chemical in nature. This is the key reaction step responsible for the chemical character of the dissolution process in that a hydrogen ion... [Pg.230]


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See also in sourсe #XX -- [ Pg.16 ]




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