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Semiconductors triods

J. Bardeen and W.H. Brattain, The transistor, a semiconductor triode, Phys. Rev. 71, 230 (1948). The Nobel Foundation, http //nobelprize.org/educational games/physics/transistor/history/ index.html (2007). [Pg.145]

F.M. Wanlass and C.T. Sah, Nanowatt logics using field effect metal oxide semiconductor triodes, in Tech. Dig. IEEE Int. Solid State Circuit Conf, p. 32 (1963). [Pg.149]

First, let us examine the detachment of particles under the influence of a dc field that has been established by converting low voltage into high voltage (in this particular case, 50 kV at a current of lO A) in a converter based on a semiconductor triode of the P4B type [198]. In studying particle detachment in vacuum or in an atmosphere of some particular gas such as nitrogen, we used a specially designed unit in which the electrode and the dust-covered surface were placed inside a bell jar connected to a vacuum pump to remove the air and to a source of gas. [Pg.221]

Conditions for the Detachment of Particles. For studying the effect of the conditions governing the detachment of particles in a high-voltage electric field on the degree of cleansing of a dust-laden surface, we set up the apparatus shown schematically in Fig. X.l. Low voltage was converted into hi (in the present case 50 kV at a current of 10" A) in a converter based on a semiconductor triode of the P4B type [440]. [Pg.347]

Figure C2.16.9. Schematic cross-section and biasing of a metai-oxide-semiconductor transistor. A unifonn conducting channei is induced between source (S) and drain (D) for > V. Voitage is appiied between the gate (G) and the source. Part (A) shows the channei for - V the transistor acts as a triode. The source-... Figure C2.16.9. Schematic cross-section and biasing of a metai-oxide-semiconductor transistor. A unifonn conducting channei is induced between source (S) and drain (D) for > V. Voitage is appiied between the gate (G) and the source. Part (A) shows the channei for - V the transistor acts as a triode. The source-...
A triode is made from two closely situated pn junctions. These devices are also known as transistors, which is a circuit element that is useful for amplifying or switching currents. Solid-state transistors have revolutionized the electronics industry. Today, very complicated integrated circuits can be made of thousands of semiconductor elements, all contained in a very small package. Such integrated circuitry is vital to the computer, as well as scientific, telecommunication, and many other businesses. Our age is truly the age of the semiconductor ... [Pg.275]

Figure 8-35. Schematic of the triode configuration of PHI for semiconductor implantation. Figure 8-35. Schematic of the triode configuration of PHI for semiconductor implantation.
Figure 2 Structure of the polymer grid triode with the various layers. (1) and (5) are the cathode and anode (pixel) arrays, respectively. The other layers are continuous films common to all the PGTs within the array (2) and(4) are semiconducting layers, poly(2-methoxy-5-(2 -ethyl-hexyloxy)-1,4-phenylene vinylene), MEH-PPV, and (3) is the common grid network filled with semiconductor (3 ). Figure 2 Structure of the polymer grid triode with the various layers. (1) and (5) are the cathode and anode (pixel) arrays, respectively. The other layers are continuous films common to all the PGTs within the array (2) and(4) are semiconducting layers, poly(2-methoxy-5-(2 -ethyl-hexyloxy)-1,4-phenylene vinylene), MEH-PPV, and (3) is the common grid network filled with semiconductor (3 ).
To build a full plastic retina, the polymer grid triode image enhancement array would be fabricated directly onto the output (back) side of a photodetector array (for example an infrared detector array) using each detector output pad as the anode or cathode of the PGT at that node. The semiconductor layers would be cast sequentially from solution and applied onto the detector array much like an antireflection coating. The final contrast enhanced output would be connected to a demultiplexer by bump-bonding that is by cold-welding indium bumps arrayed reciprocally on die PGT array output and on e demultiplexer input. [Pg.307]

Digital electronics got its start in 1906, when American inventor Lee de Forest constructed the triode vacuum tube. Large, slow, and power-hungry as they were, vacuum tubes were nevertheless used to construct the first analogfue and digital electronic computers. In 1947, American physicist William Shockley and colles ues constructed the first semiconductor transistor junction, which quickly developed into more advanced silicon-germanium junction transistors. [Pg.1057]

Transistors, which are extremely important semiconducting devices in today s microelectronic circuitry, are capable of two primary types of function. First, they can perform the same operation as their vacuum-tnbe precursor, the triode—that is, they can amplify an electrical signal. In addition, they serve as switching devices in computers for the processing and storage of information. The two major types are the junction (or bimodal) transistor and the metid-oxide-semiconductor field-effect transistor (abbreviated as MOSFET). [Pg.753]


See other pages where Semiconductors triods is mentioned: [Pg.570]    [Pg.469]    [Pg.570]    [Pg.469]    [Pg.112]    [Pg.115]    [Pg.256]    [Pg.399]    [Pg.384]    [Pg.3]    [Pg.221]    [Pg.420]    [Pg.556]    [Pg.557]    [Pg.411]    [Pg.101]   
See also in sourсe #XX -- [ Pg.303 ]




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