Semiconductors materials science and

P.M. Fauchet, C.C. Tsai, L.T. Canham, I. Shimizu, and Y. Aoyagi, Microcrystalline Semiconductors Materials Science and Devices (Materials Research Society, Pittsburgh, 1993). 

Bulsara, M. T. (1999), Dislocation dynamics in relaxed graded composition semiconductors, Materials Science and Engineering B67, 53-61. 

Coffer, J. L. Lilley, S. C. Martin, R. A. Files-Sesler, L. A. In Microcrystalline Semiconductors - Materials Science and Devices Materials Research Society Boston, MA, 1992 pp published. 

According to Gatos, the needs of solid-state electronics, not least in connection with various compound semiconductors, were a prime catalyst for the evolution of the techniques needed for a detailed study of surface structure, an evolution which gathered pace in the late 1950s and early 1960s. This analysis is confirmed by the fact that Gatos, who had become a semiconductor specialist in the materials science and engineering department at was invited in 1962 to edit a new journal to be... 

Three microbeam systems were developed at the TIARA facility for application to materials science and biotechnology. A heavy-ion microbeam system installed on a beam line of the 3-MV tandem accelerator is the first one developed to study single-event upset (SEU) of semiconductor devices used for space [36]. The microbeam system can focus heavy-ion beams such as a 15-MeV nickel ion with a spot size of less than 1 pm. In order to observe the SEU phenomena at a specific position of the microdevice, the microbeam system is equipped with a single-ion hit system, consisting of single-ion detectors and a fast beam switcher. 

Figure 6.16 Temperature dependence of charge carrier density and conductivity of extrinsic semiconductor Ge doped with 2 ppb As. From K. M. Ralls, T. H. Courtney, and J. Wulff, Introduction to Materials Science and Engineering. Copyright 1976 by John Wiley Sons, Inc. This material is used by permission John Wiley Sons, Inc.

Schmidt, W. G. III-V compound semiconductor (001) surfaces. Applied Physics A Materials Science and Processing 75, 89 (2002). 

SIMS and SNMS are versatile analytical techniques for the compositional characterization of solid surfaces and interfaces in materials research.92-94 As one of the most important applications, both surface analytical techniques allow depth profile analysis (concentration profile as a function of the depth analyzed) to be performed in materials science and the semiconductor industry with excellent depth resolution in the low nm range. For depth profiling in materials science, dynamic SIMS and SNMS using high primary ion beam doses are applied. Both techniques permit the analysis of light elements such as H, , C and N, which are difficult to measure with other analytical techniques. 

See for example Th. Pearsall ed.. Strained-layer Superlattices - Materials Science and Technology in Semiconductors and Semimetals, Vol. 32, Academic Press, Boston, 1991. 

M. Aitken and E. A. Irene, Silicon dioxide films in semiconductor devices, in Treatise on Materials Science and Technology, Vol.26, p.l. Academic Press, New York, 1985. 

The synthesis approaches for fabrication of hollow spheres of different semiconductor materials through irradiation route in large scale and under mild conditions could be of interest for both applications and fundamental studies. Indeed, it has been found that the combination of ionizing radiation and microemulsion can afford more unique conditions to control the composition, morphology, and size of NPs. Compared with other routes of building hollow spheres, radiation chemical approach is a one-step facile and effective method and has potential to produce various inorganic/polymer nanocomposite hollow spheres with potential applications in the fields of materials science and biotechnology. 

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