Semiconductors in thin film transistors

Similar diblock and triblock copolymers containing OT and PEO blocks were also synthesized and studied with respect to their self-organization properties and were employed as organic semiconductors in thin-film transistor (TFT) devices. ... 

Polymers such as PTV have potential applications as the active semiconductor layer in thin-film transistors (TFTs). 

Alkoxysilane SAMs deposited on oxidized silicon as ultrathin dielectrics in thin film transistors were first explored by the group of Vuillaume in both inorganic [53] and organic devices [54]. The SAM consisted of vinyl-terminated molecules that were subsequently oxidized to obtain a carboxyl-terminated monolayer. In the organic case, the authors combined electron beam lithography and lift-off of both the source drain electrodes and semiconductor layer. The source drain distance was as low as 30 nm. The device functioned at low voltage (2 V), but the overall performance remained modest, partly because of the nature of the semiconductor (sexithiophene). 

Karpov Y, Zhao W, Raguzin I, Beryozkina T, Bakulev V, Al-Hussein M, HauBler L, Stamm M, Voit B, Facchetti A, Tkachov R, Kiriy A (2015) Influence of semiconductor thickness and molecular weight on the ehatge transport of a naphthalenediimide-based copolymer in thin-film transistors. ACS Appl Mater Interf 7 12478-12487... 

Phthalocyanines have been used to incorporate semiconductor properties in polymers (182) or to develop a thin-film transistor (183). Phthalocyanines and their derivatives can act as dyes in color photography (qv) (184) or electrophotography (185). Light-sensitive compositions for use on Hthographic plates are comprised in part of copper phthalocyanine blue (186). Dichlorosilicon phthalocyanine [19333-10-9] has been used in the... 

Nomura, K. Ohta, H. Ueda, K. Kamiya, T. Hirano, M. Hosono, H. 2003. Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor. Science 300 1269-1273. 

Field-effect transistors (FETs) Heterojunction bipolar transistors (HBTs) High electron mobility transistors (HEMTs) Metal oxide semiconductor FETs (MOSFETs) Single-electron transistors (SETs) Single-heterojunction HBTs (SH-HBTs) Thin-film transistors (TFTs) hydrogenated amorphous silicon in, 22 135... 

The rapid developments in the microelectronics industry over the last three decades have motivated extensive studies in thin-film semiconductor materials and their implementation in electronic and optoelectronic devices. Semiconductor devices are made by depositing thin single-crystal layers of semiconductor material on the surface of single-crystal substrates. For instance, a common method of manufacturing an MOS (metal-oxide semiconductor) transistor involves the steps of forming a silicon nitride film on a central portion of a P-type silicon substrate. When the film and substrate lattice parameters differ by more than a trivial amount (1 to 2%), the mismatch can be accommodated by elastic strain in the layer as it grows. This is the basis of strained layer heteroepitaxy. 

In investigations by the authors (4) and Li et al. (5), polythieno[3,2-b]thio-phenes, (II) and (III), respectively, were prepared and used as semiconductors and in electronics as organic thin-film transistors. 

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