Semiconductor devices, high-temperature

Interest in AIN, GaN, InN and their alloys for device applications as blue light-emitting diodes and blue lasers has recently opened up new areas of high-pressure synthesis. Near atmospheric pressure, GaN and InN are nnstable with respect to decomposition to the elements far below the temperatures where they might melt. Thus, large boules of these materials typically used to make semiconductor devices caimot be grown from the... 

Considerable interest in the sohd-state physics of sihcon carbide, that is, the relation between its semiconductor characteristics and crystal growth, has resulted from the expectation that SiC would be useflil as a high temperature-resistant semiconductor in devices such as point-contact diodes (148), rectifiers (149), and transistors (150,151) for use at temperatures above those where sihcon or germanium metals fail (see Semiconductors). 

High-power, high-frequency, and high-temperature semiconductor devices. P l... 

Iron oxide (Fe Oj) and tungsten oxide (WO ) films have been studied and developed as candidate semiconductor materials for the PEC junction (photoanode). High-temperature synthesis methods, as reported for some high-performance metal oxides, have been found incompatible with multijunction device fabricatioa A low-temperature reactive sputtering process has been developed instead. In the parameter space investigated so far, the optoelectronic properties of WO3 films were superior to those of Fe Oj films, which showed high recombination of photogenerated carriers (Miller et al., 2004). 

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