Self-diffusion mechanisms

Molecular reorientations at Bjerrum fault sites are responsible for the dielectric properties of ice. A second type of fault (proton jumps from one molecule to a neighbor) accounts for the electrical conductivity of ice, but cannot account for the high dielectric constant of ice. Further discussion of such ice faults is provided by Franks (1973), Franks and Reid (1973), Onsager and Runnels (1969), and Geil et al. (2005), who note that interstitial migration is a likely self-diffusion mechanism. 

Figure 7.9 Self-diffusion mechanisms. Note v, vacancy i, interstitial iy, interstitialcy...

In this equation, /m and /o are the correlation factors for the cation and oxygen ion self-diffusion mechanisms, respectively, and are of the order of unity. Evaluation of fcp from Eq. (74) merely requires that data exist for the selfdiffusion coefficients D as function of pOi. 

Akimov and Kraftmakher (1970), using heat capacity measurements, determined the enthalpy of formation AH (23 kcal/mole) of thermally activated defects in /3-La. This value represents one-half of the experimentally measured activation energy for self-diffusion (Dariel et al., 1969b). Since Q = AH + AHm (with AHm the enthalpy of migration of the defects) and since it is well established that AH = AHm for vacancies as diffusion determining defects in fee metals, the heat capacity results seem to constitute further evidence for a vacancy dominated self-diffusion mechanism in the close-packed structures. 

It was suggested that the self-diffusion mechanism involved native defect complexes. 

In conclusion, our experiments strongly support the analogy between giant worm-like micelles and "living polymers." In the semidilute regime, the micellar self-diffusion mechanism is a reptation process truncated by a micellar breaking-recombination process. Further work is however needed to clarify the dependence of the dynamic properties on surfactant concentration. 

Theoretical studies of diffusion aim to predict the distribution profile of an exposed substrate given the known process parameters of concentration, temperature, crystal orientation, dopant properties, etc. On an atomic level, diffusion of a dopant in a siUcon crystal is caused by the movement of the introduced element that is allowed by the available vacancies or defects in the crystal. Both host atoms and impurity atoms can enter vacancies. Movement of a host atom from one lattice site to a vacancy is called self-diffusion. The same movement by a dopant is called impurity diffusion. If an atom does not form a covalent bond with siUcon, the atom can occupy in interstitial site and then subsequently displace a lattice-site atom. This latter movement is beheved to be the dominant mechanism for diffusion of the common dopant atoms, P, B, As, and Sb (26). 

He studied the sintering of copper particles in the diameter range 15-100 microns and of silver particles of diameter 350 microns. The results for the larger volume fraction of copper and for silver were shown to fit the volume diffusion mechanism and yielded the results for volume self-diffusion... 

Because of die rigidity and directionality of die covalent bonds die energies of self-diffusion have been found to be higher diaii diose of metals. In die case of silicon, it appears drat a furdier complication is drat an intersti-tialcy mechanism predominates above 1000°C. Below diis teiiiperamre, bodi elements appear to self-diffuse by atom-vacancy exchange as for die metals. 

The diffusion coefficient corresponding to the measured values of /ch (D = kn/4nRn, is the reaction diameter, supposed to be equal to 2 A) equals 2.7 x 10 cm s at 4.2K and 1.9K. The self-diffusion in H2 crystals at 11-14 K is thermally activated with = 0.4 kcal/mol [Weinhaus and Meyer 1972]. At T < 11 K self-diffusion in the H2 crystal involves tunneling of a molecule from the lattice node to the vacancy, formation of the latter requiring 0.22 kcal/mol [Silvera 1980], so that the Arrhenius behavior is preserved. Were the mechanism of diffusion of the H atom the same, the diffusion coefficient at 1.9 K would be ten orders smaller than that at 4.2 K, while the measured values coincide. The diffusion coefficient of the D atoms in the D2 crystal is also the same for 1.9 and 4.2 K. It is 4 orders of magnitude smaller (3 x 10 cm /s) than the diffusion coefficient for H in H2 [Lee et al. 1987]. 

By way of example, Volume 26 in Group III (Crystal and Solid State Physics) is devoted to Diffusion in Solid Metals and Alloys, this volume has an editor and 14 contributors. Their task was not only to gather numerical data on such matters as self- and chemical diffusivities, pressure dependence of diffusivities, diffusion along dislocations, surface diffusion, but also to exercise their professional judgment as to the reliability of the various numerical values available. The whole volume of about 750 pages is introduced by a chapter describing diffusion mechanisms and methods of measuring diffusivities this kind of introduction is a special feature of Landolt-Bornstein . Subsequent developments in diffusion data can then be found in a specialised journal. Defect and Diffusion Forum, which is not connected with Landolt-Bdrnstein. 

Manometric and volumetric methods (kinetics) Thermogravimetry (kinetics from very thin films to thick scales stoichiometry) Electrical conductivity of oxides and allied methods (defect structures conduction mechanisms transport numbers) Radioactive tracers and allied methods (kinetics self diffusion markers)... 

Before any chemistry can take place the radical centers of the propagating species must conic into appropriate proximity and it is now generally accepted that the self-reaction of propagating radicals- is a diffusion-controlled process. For this reason there is no single rate constant for termination in radical polymerization. The average rate constant usually quoted is a composite term that depends on the nature of the medium and the chain lengths of the two propagating species. Diffusion mechanisms and other factors that affect the absolute rate constants for termination are discussed in Section 5.2.1.4. 

Mechanisms of micellar reactions have been studied by a kinetic study of the state of the proton at the surface of dodecyl sulfate micelles [191]. Surface diffusion constants of Ni(II) on a sodium dodecyl sulfate micelle were studied by electron spin resonance (ESR). The lateral diffusion constant of Ni(II) was found to be three orders of magnitude less than that in ordinary aqueous solutions [192]. Migration and self-diffusion coefficients of divalent counterions in micellar solutions containing monovalent counterions were studied for solutions of Be2+ in lithium dodecyl sulfate and for solutions of Ca2+ in sodium dodecyl sulfate [193]. The structural disposition of the porphyrin complex and the conformation of the surfactant molecules inside the micellar cavity was studied by NMR on aqueous sodium dodecyl sulfate micelles [194]. 

Consider the following diagram, given as 4.7.1. on the next page, showing two types of self-diffusion. Self diffusion can occur by at least two mechanisms, vacancy and interstitial. Both are "hopping" motions, as described above. 

The molecular weight (M) dependence of the steady (stationary) primary nucleation rate (I) of polymers has been an important unresolved problem. The purpose of this section is to present a power law of molecular weight of I of PE, I oc M-H, where H is a constant which depends on materials and phases [20,33,34]. It will be shown that the self-diffusion process of chain molecules controls the Mn dependence of I, while the critical nucleation process does not. It will be concluded that a topological process, such as chain sliding diffusion and entanglement, assumes the most important role in nucleation mechanisms of polymers, as was predicted in the chain sliding diffusion theory of Hikosaka [14,15]. 

H. Allen, O. Hill, N.I. Hunt, and A.M. Bond, The transient nature of the diffusion controlled component of the electrochemistry of cytochrome c at bare gold electrodes an explanation based on a self-blocking mechanism. J. Electroanal. Chem. 436, 17-25 (1997). 

In the case of interstitials—self-interstitials, impurities, or dopants—two diffusion mechanisms can be envisaged. In the simplest case, an interstitial can jump to a neighboring interstitial position (Fig. 5.8a). This is called interstitial diffusion and is sometimes referred to as direct diffusion to distinguish it from vacancy diffusion (indirect diffusion). 

Figure 5.11 Diffusion mechanisms (a) exchange (e) and ring (r) diffusion (b) kick-out diffusion, leading to (c) a substitutional defect and a self-interstitial.

If both ionic conductivity and ionic diffusion occur by the same random-walk mechanism, a relationship between the self-diffusion coefficient, D, and the ionic... 

The non-collective motions include the rotational and translational self-diffusion of molecules as in normal liquids. Molecular reorientations under the influence of a potential of mean torque set up by the neighbours have been described by the small step rotational diffusion model.118 124 The roto-translational diffusion of molecules in uniaxial smectic phases has also been theoretically treated.125,126 This theory has only been tested by a spin relaxation study of a solute in a smectic phase.127 Translational self-diffusion (TD)29 is an intermolecular relaxation mechanism, and is important when proton is used to probe spin relaxation in LC. TD also enters indirectly in the treatment of spin relaxation by DF. Theories for TD in isotropic liquids and cubic solids128 130 have been extended to LC in the nematic (N),131 smectic A (SmA),132 and smectic B (SmB)133 phases. In addition to the overall motion of the molecule, internal bond rotations within the flexible chain(s) of a meso-genic molecule can also cause spin relaxation. The conformational transitions in the side chain are usually much faster than the rotational diffusive motion of the molecular core. 

---