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Selected area diffraction pattern

Fig.6 AJIoy AlZn78 quenched from 643K to room temperature water, (a) Transmission electron micrograph, (b) Corresponding Selected Area Diffraction Pattern (SADP). Fig.6 AJIoy AlZn78 quenched from 643K to room temperature water, (a) Transmission electron micrograph, (b) Corresponding Selected Area Diffraction Pattern (SADP).
Fig. 3 (left) TEM bright-field and (middle) dark-field images, and (right) selected area diffraction pattern from a 20 vol% Si3N4/5052 Al composite at 548 °C. (from Ref. [8,9])... [Pg.418]

Figure 4. Electron micrographs of mineral aurichalcite calcined at 400 C for 4 hours, (a) Bright field image, (b) Selected area diffraction pattern showing ZnO orientations with zone axes of [1010], [3031] and [5051]. See text for other ZnO orientations. Figure 4. Electron micrographs of mineral aurichalcite calcined at 400 C for 4 hours, (a) Bright field image, (b) Selected area diffraction pattern showing ZnO orientations with zone axes of [1010], [3031] and [5051]. See text for other ZnO orientations.
Fig. 33. Selected area diffraction patterns of Ti-Al alloys taken on the [001] zone axis which show the increasing relative intensity of the superlattice reflections with increasing Ti content (a) 3 a/o Ti, (b) 5 a/o Ti, (c) 16 a/o Ti, and (d) 24 a/o Ti. A labeled schematic of the diffraction pattern is shown [188],... Fig. 33. Selected area diffraction patterns of Ti-Al alloys taken on the [001] zone axis which show the increasing relative intensity of the superlattice reflections with increasing Ti content (a) 3 a/o Ti, (b) 5 a/o Ti, (c) 16 a/o Ti, and (d) 24 a/o Ti. A labeled schematic of the diffraction pattern is shown [188],...
Figure 10c. Typical HREM image (with associated selected area diffraction pattern and schematic illustration of framework structure) after dealumination of a faufasitic zeolite by exposure to SiCl4. Figure 10c. Typical HREM image (with associated selected area diffraction pattern and schematic illustration of framework structure) after dealumination of a faufasitic zeolite by exposure to SiCl4.
An example of CBED pattern is given in fig. 2. The pattern consists of disks. Each disk can be divided into many pixels, each pixel approximately represents one incident beam direction. For an example, let us take the beam P in fig. 2. This particular beam gives one set of dififaction pattern shown as the full lines. The diffraction pattern by the incident beam P is the same as the selected area diffraction pattern with a single parallel incident beam. For a second beam P , which comes at different angle compared to P, the diffraction pattern in this case is displaced from that of P by a/A. with a as the angle between the two incident beams. [Pg.146]

Figure 10. Selected-area diffraction pattern from an ultrathin section of the whole of one sphere... Figure 10. Selected-area diffraction pattern from an ultrathin section of the whole of one sphere...
Local Orientation. The most striking observation of this work is that the selected area diffraction patterns are not in general of a Debye-Scherrer type. Among the various hypotheses which can be drawn to understand such a fact, the most probable one is that the sections are not truly transverse ones indeed, if one supposes the existence of a cylindrical symmetry at the level of each selected area, 0.5 to 1 ym in diameter (the symmetry axis being always parallel to the fiber axis) the "detectable" network main planes have to be parallel to 1he "c" axis of the individual... [Pg.292]

Fig. 6.6. TEM micrograph cross-section of a 2 tm thick LP-CVD ZnO B layer covered by a tc-Si H solar cell (top left) SEM micrograph of the surface of a 2 tm thick LP-CVD ZnO B layer deposited at 155°C and 0.5mbar (top right) X-Ray diffraction of a 2 tm thick LP-CVD ZnO B layer deposited at 155° C and 0.5mbar (bottom left) Indexed selected-area diffraction pattern performed with the TEM electron beam focused on one columnar grain (represented by the black circle on the TEM micrograph shown at top left part of the figure). In the diffraction pattern the zone axis B = z = [l2l3] (bottom right)... Fig. 6.6. TEM micrograph cross-section of a 2 tm thick LP-CVD ZnO B layer covered by a tc-Si H solar cell (top left) SEM micrograph of the surface of a 2 tm thick LP-CVD ZnO B layer deposited at 155°C and 0.5mbar (top right) X-Ray diffraction of a 2 tm thick LP-CVD ZnO B layer deposited at 155° C and 0.5mbar (bottom left) Indexed selected-area diffraction pattern performed with the TEM electron beam focused on one columnar grain (represented by the black circle on the TEM micrograph shown at top left part of the figure). In the diffraction pattern the zone axis B = z = [l2l3] (bottom right)...
The structure of the PLD grown ZnO thin films on c-plane, a-plane, and r-plane sapphire substrates will be explained by results of X-ray diffraction (XRD), transmission electron microscopy (TEM) with selected area diffraction patterns (SAD), and reflection high-energy electron diffraction (RHEED). [Pg.314]

The selective area diffraction pattern shown in the inset reveals the monociystalline nature of the pyramids. [Pg.448]

Fig. 6 a TEM images of the CNT-g-P2VP after deposition of PB2 clusters. b,c HR TEM images of the core-shell structure of the particles consisting of a dense crystalline core (diameter of 3-5 nm) surrounded by a few nanometer-thick amorphous shell. HR TEM image (d) and selected area diffraction pattern (e) confirm the crystalline structure of the PB clusters (lattice distances of 2.09 A (Fe —N), 1.96 A and 1.83 A (Fe —C) that correspond to the (422), (333) and (404) reflections, respectively)... [Pg.166]

Fig. 10. (a) Selected area diffraction pattern of the reduced Cu/ZnO = 30/70 catalyst from an area shown in the upper part of Fig. 8 (b) schematic diffraction pattern showing the spots from ZnO ( ) and Cu ( ). The circles with the solid lines and the circles with dashed lines are the more intense diffraction rings from ZnO and Cu, respectively 40). [Adapted with permission from J. Catal. 57, 339 (1979). Copyright (1979) Academic Press, New York.]... [Pg.265]

Fig. 22. (a) Transmission electron micrograph and (b) selected area diffraction pattern of a single hexagonal porous particle of the Cu/Zn0/Al203 catalyst prepared from acetates (77). The Cu/Zn/Al ratio exclusive of crystalline copper, which appears as dark crystallites, was equal to 8/50/42. [Pg.294]

Selected area diffraction patterns of ZSM-5/ZSM-ii intergrowths. The arrowed superlattice maxima in 10(b) suggest a periodicity of about 70R. [Pg.193]

Figure 12.5 (a) XRD pattern, (b) bright-field image and (c) selected area diffraction pattern from the hemihydrate precursor material [94], (Reproduced with permission). [Pg.509]

Figure 8.42. (a) Selected area diffraction pattern of a typical peristerite (Anio)-... [Pg.254]

In order to probe the out-of-plane lattice parameter, we turn to TEM. We show in Fig. 8 a selected area diffraction pattern obtained in cross section with... [Pg.315]

Fig. 8 TEM selected area diffraction pattern for the a-Cr203/a-Fc203 superlattice grown on a-AbOsCOOOl). The primary beam was aligned along [lOl 0]. Fig. 8 TEM selected area diffraction pattern for the a-Cr203/a-Fc203 superlattice grown on a-AbOsCOOOl). The primary beam was aligned along [lOl 0].
Fig. 10 Plan view dark field TEM image based on a 220 reflection and selected area diffraction pattern for 500A Fe304 on MgO(OOl). Arrows indicate the location of intersection points of sets of three APBs. Fig. 10 Plan view dark field TEM image based on a 220 reflection and selected area diffraction pattern for 500A Fe304 on MgO(OOl). Arrows indicate the location of intersection points of sets of three APBs.
Fig. 17.5 (a) Transmission electron microscope image of a Si NW with corresponding selective area diffraction patterns indicating a change in growth direction from 111 to 112 after a kink left to right), (b) Raman spectra from regions marked circles in (c) and (d) top and bottom, respectively). [Pg.490]

Fig. 10.15. A magnified image of the coaxial nanostructure, showing a crystalline core and two additional amorphous layers (a-Si02 and a-C). The inset shows the selected area diffraction pattern [65]. Fig. 10.15. A magnified image of the coaxial nanostructure, showing a crystalline core and two additional amorphous layers (a-Si02 and a-C). The inset shows the selected area diffraction pattern [65].
Figure 3.30 Single crystal of NaCl (a) bright-field image and (b) selected area diffraction pattern. Rm> Rn are the radii of spots m and n, respectively. The transmitted beam direction is parallel to [001]. Figure 3.30 Single crystal of NaCl (a) bright-field image and (b) selected area diffraction pattern. Rm> Rn are the radii of spots m and n, respectively. The transmitted beam direction is parallel to [001].
Hi - 3.41. Selected area diffraction pattern of AI(,5Cu2 Mn15 powder milled for 100 h at milling intensity 7. Three different exposure times (increasing clockwise) were used for a better identification of weak intensity details. All Debye Seherrer rings can be indexed in ieosahedral notation, e g., (a) (100 000), (h)(l 10 000). (e) (I 1 I 000), and (d) (101 000)... [Pg.111]

Figure 4 TEM dark field image of SSA018 alloy after solution annealing and water quenching shows Al3(Sc,Zr) particles (left) and corresponding selected area diffraction pattern (right) shows that the particles have an Ll2 crystal structure and are coherent with... Figure 4 TEM dark field image of SSA018 alloy after solution annealing and water quenching shows Al3(Sc,Zr) particles (left) and corresponding selected area diffraction pattern (right) shows that the particles have an Ll2 crystal structure and are coherent with...
Figure 5. (a) TEM microstructure of Cr-35 at. % Re alloy deformed at 20 °C, e = 71% cell structure has formed, (b) Corresponding selected area diffraction pattern (SADP). [Pg.332]

A typical electron micrograph showing dislocation loops in molybdenite 87) is shown in Fig, 33. It is important to appreciate that the precise nature of the observed dislocation line (which has a thickness of the order of 100 A) depends, in turn, on the precise diffraction conditions that prevail. Thus, if the sample is titled with respect to the electron beam, we may, at some angles, observe two dark lines on either side of the dislocation, or a single dark line on one side, or no line at all. When no line is observed, the dislocation is said to be out of contrast, and the angle of tilt that produces such an effect yields, in conjunction with the selected area diffraction pattern, the direction of the Burgers vector of the dislocation. [Pg.341]

Figures 8 and 9, plate 3, are lattice images of two compounds (n = 2 and w = 5 respectively) showing evidence of 180° domain walls. The c axes, normal to the dark BigOa sheets in the plane of the image, are nearly, but not exactly, parallel in the two domains the two component c axes, C and C, are inclined at about 3°. These observations suggest that the domain walls are of 180° type and that the polar axes of both the n = 2 and n = 5 compounds deviate slightly from the ct or Cq axes. As in Bi4Ti30j2, there may be some small monoclinic distortion. Selected area diffraction patterns, nominally taken from both sides of the domain boundary, were identical, but the small size of the domain, about 50 nm across, makes the evidence from selected area diffraction inconclusive. As expected for 180° domains, the domain walls are quite thin since only a small adjustment or relaxation of the [BOg] octahedra would be necessary, the structure of the wall is undoubtedly simple. As a consequence, the lines of contrast due to the A site cations are clearly visible in the neighbourhood of the wall (figure 9), with only minor distortions around the boundary (dashed line). Figures 8 and 9, plate 3, are lattice images of two compounds (n = 2 and w = 5 respectively) showing evidence of 180° domain walls. The c axes, normal to the dark BigOa sheets in the plane of the image, are nearly, but not exactly, parallel in the two domains the two component c axes, C and C, are inclined at about 3°. These observations suggest that the domain walls are of 180° type and that the polar axes of both the n = 2 and n = 5 compounds deviate slightly from the ct or Cq axes. As in Bi4Ti30j2, there may be some small monoclinic distortion. Selected area diffraction patterns, nominally taken from both sides of the domain boundary, were identical, but the small size of the domain, about 50 nm across, makes the evidence from selected area diffraction inconclusive. As expected for 180° domains, the domain walls are quite thin since only a small adjustment or relaxation of the [BOg] octahedra would be necessary, the structure of the wall is undoubtedly simple. As a consequence, the lines of contrast due to the A site cations are clearly visible in the neighbourhood of the wall (figure 9), with only minor distortions around the boundary (dashed line).

See other pages where Selected area diffraction pattern is mentioned: [Pg.191]    [Pg.50]    [Pg.329]    [Pg.345]    [Pg.565]    [Pg.594]    [Pg.76]    [Pg.447]    [Pg.557]    [Pg.217]    [Pg.262]    [Pg.230]    [Pg.302]    [Pg.211]    [Pg.214]    [Pg.217]   
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See also in sourсe #XX -- [ Pg.241 , Pg.246 ]




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