Scanning atomic microscopy formation

Film-forming chemical reactions and the chemical composition of the film formed on lithium in nonaqueous aprotic liquid electrolytes are reviewed by Dominey [7], SEI formation on carbon and graphite anodes in liquid electrolytes has been reviewed by Dahn et al. [8], In addition to the evolution of new systems, new techniques have recently been adapted to the study of the electrode surface and the chemical and physical properties of the SEI. The most important of these are X-ray photoelectron spectroscopy (XPS), SEM, X-ray diffraction (XRD), Raman spectroscopy, scanning tunneling microscopy (STM), energy-dispersive X-ray spectroscopy (EDS), FTIR, NMR, EPR, calorimetry, DSC, TGA, use of quartz-crystal microbalance (QCMB) and atomic force microscopy (AFM). 

In NSR catalysts, the Ba-Pt interface plays an important role in the storage of NOx, which occurs by the formation of Ba(N03)2. Recent results [95] using scanning transmission microscopy (STM) and a model catalyst formed by deposition of a Ba thin films on Pt(lll) showed that, at room temperature, a film of Ba was formed with few individual Ba atoms, which were locally ordered. Upon annealing, particles are produced, of which atomic resolution is achieved with an atomic spacing consistent with the (111) plane of Ba. 

Nanostructured materials have also been formed by scanning tunneling microscopy (STM) [24], scanning electrochemical microscopy (SECM) [25], and atomic force microscopy (AFM) [26], Recent reports on the modification of atomic sites at bare surfaces by STM [27] and the formation of nanometer-scale defects by STM [28] and AFM [29] illustrate the power of these techniques. 

The resolution obtained with the laser spot technique is far exceeded by scanning tunneling microscopy where, in some cases, atomic resolution in electrochemical cases has been reached (Szklarczyk and Velev, 1989). The first successful studies of semiconductors in air (Fig. 10.31) and in an electrochemical situation (Fig. 10.32) were made onp-Si 111 (Gonzalez-Martin, 1990). It was found that the electrochemical formation of SiOx and SiOH induces surface states at 0.25 V above the valence band at the surface (Fig. 10.33). 

---