Saturated voltage

The saturation current ljsul is obtained by setting Q L) = 0 in Eq. (14.24), which gives the saturation voltage VdMi. Substituting this value into Eq. (14.29) leads to... 

V, being the saturation voltage (the voltage on the grid for which A V, does not produce any appreciable variation in the anode current and S is the mutual conductance). 

The rate of decay and the temperature dependence of the saturated voltage can be used to obtain the concentration and energy distribution of the deep traps responsible for the residual potential. Thus, provides a useful means of studying the nature of deep traps in amorphous semiconductors and has been successfully used to derive the energy distribution of deep localized states in the mobility gap of both a-Se and a-Si H [10,18],... 

A simple pulse-shaping modification can be added to the Bessel-Thompson delay filter by using an additional operational amplifier. Resistors are used to divide down the supply voltage to half the output voltage of the delay filter, and its response is then compared with the delay filter s response, which results in a time-delayed square wave. The schematic of this circuit is shown in Fig. 3.31. This simulation also allows us to compare the operational amplifier models that came with each software package. The response of this circuit is driven from rail to rail, providing the saturation voltages of the models. Also, the slew rate of the output should be consistent with the measured and... 

When a reactively sputtered a-Si H is used for the photosensitive layer, the voltage at which the photocurrent saturates is about 15 V for undoped a-Si H. This saturation voltage decreased to 5 V when using nitrogen-doped a-Si H due to the increased electron mobility (Shimomoto et al., 1982). 

The ITO electrode is negatively biased relative to the Al electrode. Electron and hole pairs are generated by the incident light and electrons pass through the a-Si H. Since in undoped a-Si H the electron mobility is small, nitrogen is added to the sputtering atmosphere to increase the electron mobility. As a result, the photocurrent saturation voltage for the photodiode decreased to 5 V and the photoresponse time decreased to less than 500 psec (Shimomoto et al., 1982). 

The saturation voltage depends on the intensity of the radiation we wish to measure if this intensity is relatively low, a voltage of a few hundred volts is enough, whereas for more intense beams, the saturation voltage ean go up to 800 volts. 

Calculated and measured contact angle saturation vs. insulator thickness (t/Sr) for water droplets in air and silicone oil media are shown above in Fig. 5. It can be seen that the saturation voltage is essentially independent of the filler medium (silicone oil with yig(oil) = 47 mN/m and air with yig(air) =... 

I hc number of electrons ejected from a pholoemissive surface is directly proportional to the radiant power of the beam that strikes that surface. As the voltage applied across the two electrodes of the lube is increased, the fraction of the emiiicd electrons that reaches the anode rapidly increases when the saturation voltage is achieved, essentially all of Ihe electrons are collected at Ihe anode. The current then becomes independent of voltage and directly proportional to the radiant power. Phototubes are usually operated at a voltage of about 90 V. which is well within the saturation region. 

An ionization chamber functions in the field of saturation, with the saturation voltage applied siphoning off all charge carriers created by ionization of charged particles along their path. In this phase, a linear relationship exists between pulse height and saturation voltage. 

When using a bipolar junction transistor in the saturated mode, the saturation voltage must be taken into account. It cannot be ignored as in the previously discussed classifications because, in those, Vsat was never reached. Also when saturated, collector current is not infinite. It is Hmited by an equivalent on resistance so that / sat = l Sat/l oir... 

The onset of saturation occurs when the collector-emitter voltage equals the saturation voltage. Ron is finite allowing Vsat to be greater than zero so that the saturated collector current is finite during saturation. 

On-resistance The collector-emitter resistance of a bipolar junction transistor or the drain-source resistance of a field effect transistor when driven to saturation. In the case of the BJT, it is equal to the collector-emitter saturation voltage divided by the collector current and is a function of both. In the case of the FET, it is equal to the saturated drain-source voltage divided by the drain current, but is not a function of either one. 

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