RF growth

Takeyama H, Hoon DS, Saxton RE, Morton DL, Irie RF. Growth inhibition and modulation of cell markers of melanoma by S-allyl cysteine. Oncology 1993 50 63-69. 

Other interesting thin-film studies using AES have included the growth of platinum on Ti02- and SrO-terminated (100) SrTiOs single-crystal substrates [2.154], of epitaxial niobium films on (110) T1O2 [2.155], the interaction of copper with a (0001) rhenium surface [2.156], and the characterization of radio-frequency (rf) sputtered TiN films on stainless steel [2.157]. 

Ramsey, M. E., Poindexter, E., Pelt, J. S., Marin, J., and Durbin, S. M., Hydrophobic CNx Thin Film Growth by Inductively-coupled RF Plasma Enhanced Pulsed Laser Deposition, Thin Solid Films, Vol. 360, No. 1-2,2000, pp. 82-88. 

The discrepancy may also be caused by the approximations in the calculation of the EEDF. This EEDF is obtained by solving the two-term Boltzmann equation, assuming full relaxation during one RF period. When the RF frequency becomes comparable to the energy loss frequencies of the electrons, it is not correct to use the time-independent Boltzmann equation to calculate the EEDF [253]. The saturation of the growth rate in the model is not caused by the fact that the RF frequency approaches the momentum transfer frequency Ume [254]. That would lead to less effective power dissipation by the electrons at higher RF frequencies and thus to a smaller deposition rate at high frequencies than at lower frequencies. 

FIG. 12. Growth rate of a-C(N) H films deposited by ECRRF as a function of RF self-bias, for several N2 partial pressures. (Reproduced from (62. )... 

Figure 16 (Street et al., 1986) shows the typical sample structure, consisting of three layers of a-Si H. Results using this technique have been reported for samples grown by the rf glow discharge of silane and by rf sputtering (Shinar et al., 1989). The first layer is hydrogenated amorphous silicon, deposited under conditions that yield high quality films (i.e., deposition temperature of 230°C, low growth rate) and is typically two microns thick. Next a layer of approximately 1000 A is deposited, whereby...

A final advantage of the cosputtered CCS approach is that rf bias, typically 10 W, under independent control can be supplied to the substrate as indicated in the schematic diagram (Fig. 10.2). We speculate that the role of substrate bias is to increase surface mobility during film growth. This changes the microstructure and decreases the defect density of the as-grown film, which is related to the leakage behavior of... 

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