Reversed bias

An additional limit to the size of a passive array relates to the current which flows in an OLED when it is under reverse bias [189]. When a given pixel is turned on in the array, there are many possible parallel paths for the current, each involving two diodes in reverse bias and one forward. Hence, as the number of rows and columns increases, there is a higher level of background emission from non-selected pixels that limits the contrast ratio of the array. As a result, the contrast degrades as N increases. 

The simplest and most widely used model to explain the response of organic photovoltaic devices under illumination is a metal-insulaior-metal (MIM) tunnel diode [55] with asymmetrical work-function metal electrodes (see Fig. 15-10). In forward bias, holes from the high work-function metal and electrons from the low work-function metal are injected into the organic semiconductor thin film. Because of the asymmetry of the work-functions for the two different metals, forward bias currents are orders of magnitude larger than reverse bias currents at low voltages. The expansion of the current transport model described above to a carrier generation term was not taken into account until now. 

The photovoltaic properties of PPV and PPV based soluble polymers have been quantitatively confirmed also for polythiophenes. The IN characteristics of ITO/ P30T/Au [60] and of ITO/P3HT/Au [61] diodes showed excellent rectification behavior and a high photosensitivity under reversed bias. 

Figure 15-13. (a) Pholocurrenl action spectra at room temperature for a thick photodiode (ITO/780 nm MEH-PPV/A1) under illumination through the ITO electrode, under forward bias (dash dot) and reverse bias (solid line), with the room temperature absorption spectrum (dashed line) shown for comparison. (b) Pholocurrenl action spectra at room temperature for a thin photodiode (ITO/120 nm MEH-PPV/A1) under illumination through the ITO electrode, under forward bias (dash dot line) and reverse bias (solid line), with the room temperature absorption spectrum (dashed line) shuwn for comparison (reproduced by permission of the American Physical Society from Ref. 176)). 

Figure 15-21 shows the dependence of the short circuit current and the photocurrent at -IV (reverse) bias as a function of the illumination intensity (514.5 nrn) the data show no indication of saturation al light intensities up to ca. 1 W/cm2. 

FIGURE 3.47 The structure of a p-n junction allows an electric current to flow in only one direction, (a) Reverse bias the negative electrode is attached to the p-type semiconductor and current does not flow, (b) Forward bias the electrodes are reversed to allow charge carriers to be regenerated. 

A variety of colors, such as green, amber, and red (and infrared), can be obtained with different semiconductor materials without the need for a filter (see Ch. 13, Table 13.4). A LED (or photodiode) device may consist of multiple diodes in an array operating in the reverse-bias mode. Patterns of light showing symbols, letters, or numbers can thus be produced with different colors obtained by doping the semiconductor material by CVD or ion implantation. 

Electroluminescent devices were made to demonstrate the possible application of these a-Si H materials. Er-doped p-n diodes in c-Si show electroluminescence, both in forward and reverse bias [670-672]. Under forward bias the electrolu-... 

Incorporated in a device, the LPCVD -Si H material shows electroluminescence only in reverse bias [673]. The mechanism is similar to the one described for c-Si. The PECVD a-Si H material was incorporated in a p-i-n solar cell structure, with a thickness of the intrinsic layer of 500 nm (see Section 1.11.1). Oxygen was coimplanted at 80 keV (3.2 x 10 O/em-) and at 120 keV (5.5 x lO 0/cm ), which resulted in a roughly constant oxygen concentration of 1.0% in the Er projected range in the middle of the intrinsic a-Si H layer. Electroluminescence is observed under forward bias [674]. 

A rectifier, or diode, passes electrical current in one direction (the forward bias direction), but blocks it in the other direction (reverse bias). For a molecule between two electrodes in a metal I molecule I metal sandwich, there are three distinct processes that can give rise to such an asymmetrical conduction. 

Fig. 10 Aviram-Ratner rectification via HOMO and LUMO. (a) A D-o-A molecule is sandwiched between two metal electrodes. MD is the electrode proximal to the donor, MA is the electrode proximal to the acceptor, is the electrode metal work function, IPD is the ionization potential of the donor, EAa is the electron affinity of the acceptor, (b) No pathway for current exists when a voltage is applied in the reverse bias direction, (c) Under a comparable voltage to (b) but in the forward bias direction, rectification results from electrons flowing from MA to LUMO to HOMO to MD...

Under +1 V of forward bias (Fig. lid), there is no pathway for current flow. At +2 V, however, the orbitals have adjusted to give a downhill path from MA to acceptor to donor to MD, and Aviram-Ratner current flows. On the reverse bias side, however, two pathways exist for current flow at —1 V (Fig. 1 lb) as well as —2 V (Fig. 11a). These pathways (Fig. 11a, b) are asymmetric rectification via HOMO and via LUMO, and they are in the anti-Aviram-Ratner direction, i.e., from donor to acceptor. This could allow for anti-Aviram-Ratner rectification under moderate biases. Note, however, that the electrons in Fig. 11a, b must tunnel over longer distances than those in Fig. lie, because there is only one way-station, instead of two. The Aviram-Ratner current flow under the higher bias of Fig. lie could therefore be much more intense than the reverse flow of Fig. 1 lb or 1 la. 

When the sample is biased positively (Ub > 0) with respect to the tip, as in Fig. 9c, and assuming that the molecular potential is essentially that of the substrate [85], only the normal elastic current flows at low bias (<1.5 V). As the bias increases, electrons at the Fermi surface of the tip approach, and eventually surpass, the absolute energy of an unoccupied molecular orbital (the LUMO at +1.78 V in Fig. 9c). OMT through the LUMO at — 1.78 V below the vacuum level produces a peak in dl/dV, seen in the actual STM based OMTS data for nickel(II) octaethyl-porphyrin (NiOEP). If the bias is increased further, higher unoccupied orbitals produce additional peaks in the OMTS. Thus, the positive sample bias portion of the OMTS is associated with electron affinity levels (transient reductions). In reverse (opposite) bias, as in Fig. 9b, the LUMO never comes into resonance with the Fermi energy, and no peak due to unoccupied orbitals is seen. However, occupied orbitals are probed in reverse bias. In the NiOEP case, the HOMO at... 

The decrease in free carriers (holes) after hydrogenation of p-type Si is also evidenced by the decrease in IR absorption at the longer wavelengths, where free-carrier absorption dominates, and by a decrease in the device capacitance of Schottky-barrier diodes, due to the increase in the depletion width (at a given reverse bias) as the effective acceptor concentration decreases. 

Fig. 4. I(V) characteristics of diodes under reverse bias Iox, Si02-passivated Ia.si H, a-Si H passivated the dashed line shows Ia.si H after heating at 500°C for hour. The inset shows a cross-sectional diagram of the diode.

---