Range projected

An approximate measure of the projected range can be found using the theory of Lindhard et al. (1963), which gives 

A more exact relation between range and projected range was calculated using power law-based LSS theory by Winterbon, Sigmund, and Sanders (WSS 1970). Plots of RfJR as a function of M2IM for the power law conditions of m = 1/3 and 1/2, are presented in Fig. 6.4. 

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Fig. 6. An incident ion penetrates with a total path length R, which gives a projected range, R, along the direction parallel to that of the incident ion (1).

An estimate of AR ia alloys can be made usiug the empirical expression (12) of equation 10 where the average alloy reduced energy, is defined by equation 11, where C (i = 1, 2,... , n) is the elemental atomic fraction of the /th element, and is the elemental reduced energy defined iu equation 3. Using this formulation, the projected range straggling iu compounds can be calculated to within 20%. 

Increases in concentrations of carbon dioxide within projected ranges are not expected to have direct effects on animals. However, changes in... 

Figure 2. (a) Range R and projected range Rp along the implantation direction perpendicular to the sample surface, (b) In-depth Au... 

Incorporated in a device, the LPCVD -Si H material shows electroluminescence only in reverse bias [673]. The mechanism is similar to the one described for c-Si. The PECVD a-Si H material was incorporated in a p-i-n solar cell structure, with a thickness of the intrinsic layer of 500 nm (see Section 1.11.1). Oxygen was coimplanted at 80 keV (3.2 x 10 O/em-) and at 120 keV (5.5 x lO 0/cm ), which resulted in a roughly constant oxygen concentration of 1.0% in the Er projected range in the middle of the intrinsic a-Si H layer. Electroluminescence is observed under forward bias [674]. 

Gaussian-shaped depth profiles of P with three parameters of maximum concentration (Cmax), projected range (Rp) and range straggling (ARp). The energy loss (dE/dx) and energy straggling ( 2 square root of the variance) of the a beam in the Si layer were taken into account ... 

Figure 4.36. Comparison of experimental results with calculated values of projected ranges (i p) as a function of implant energy for P in Si. (Reproduced by permission of Kobayshi and Gibson 1999.)...

No total project cost data were reported for any of the projects in the dataset that employed PRB treatment technology. However, additional information in the literature indicates the application of PRBs for the treatment of other contaminants. A U.S. EPA case study in 2000 showed a range of total costs for 16 PRB projects ranging from USD43,000 to USD1,900,000 with a median total cost of USD680,000.50... 

A number of strategic research topics were pursued for fuel cell systems in the EU funded projects, ranging from basic research to validation and demonstration activities for gaining field experience . All activities were targeting systems which could be commercially viable by 2020 for many applications, with focus on the high temperature technologies (mainly Solid Oxide, SOFC) and... 

The thickness of modified surface layer is determined by ion projected range Rp, measured in the direction of the sample surface normal. 

Figure 11. Projected ranges of Ar, H, He, and Ga and the developed thickness removed of Dupont Elvacite 2008 PMMA after exposure with 10 cm Ar and Ga, respectively. (Reproduced with...

There is a probability N 8R do for a collision specified by energy transfer T to the translational motion of the struck atom. N is the volume density of atoms, and one approximation for do is given by Equation 9. If a collision occurs, the particle has a probability F(x — 5x, E — T,ri ) of obtaining a total projected range, x. Therefore, N 5R do F(x — 5x, E — T,r ) is the contribution from this specified collision to the total probability for the projected range, x. When this term space is integrated over all collisions, the total contribution becomes ... 

There is left a probability 1 — N 5R J da that no collision occurs. In this event, we clearly get a contribution [1 — N 5R J da] F fx — 5x, E,t ) to the total probability for the projected range, x. Equating these two terms to the initial distribution yields ... 

That these ideas have some merit is indicated by the work of Hart, Dunlap, and Marsh . These investigators deposited a fraction of a monolayer of copper onto a silicon wafer and then monitored the position and concentration of the copper using Rutherford backscattering. After deposition, the copper, which was then located on the immediate surface, was bombarded with 20 keV Ne ions to a fluence sufficient to sputter 90 A of Si from the surface. The Rutherford backscattering spectrum, which was taken after this bombardment, showed that the copper was uniformly distributed to a depth of 600 A which corresponds roughly to the projected range of the Ne" " ions, i.e., the depth of the altered layer was approximately equal to the projected range of the Ne. 

Figure 6 shows a two-dimensional schematic view of an individual ion s path in the ion implantation process as it comes to rest in a material. The ion does not travel in a straight path to its final position due to elastic collisions with target atoms. The actual integrated distance traveled by the ion is called the range, R The ion s net penetration into the material, measured along the vector of the ion s incident trajectory, which is perpendicular to the surface in this example, is called the projected range, R. ... 

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