Resolution photo-resist material

In contrast to the si tion processes in i ch the near-surface region is modified, far fewer aiq>roadies exist for direct man ulation of the top oaf ace of a substrate to provide high resolution patterns of etch resistant materials. The initial report of top-surface imaging (TSfi utilized selective deposition of TIOj on the photo-oxidized surface of hydrophobic pofymers (4, 5). 

During the early years of the microelectronics industry, the imaging process used to define the layers of patterned conductor, insulator, and semiconductor materials that constitute active devices was accomplished by using contact printing in conjunction with resists based on photo-induced cross-linking to generate differential solubility. The resolution of the processes in... 

Several combinations of chemical deposition process of the conductor materials and photo-sensitive resists have been tried. Unfortunately, there is no good combination that satisfies the needs for both high-resolutions and physical performances. Further improvement is required to have practical high density flexible circuits. 

---