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B implants and low-temperature furnace annealing with transient diffusion that is associated with the activated removal of implant damage in the tail region of the implant. The magnitude of the enhanced, transient diffusivity increases with implant dose and energy but reaches saturation at 2 x 10 13 cm2/s. [Pg.307]

See other pages where Low-temperature furnace annealing is mentioned: [Pg.306] [Pg.306] [Pg.308]