Tantalum nitride

Tantalum Nitrides. Tantalum nitride [12033-62-4] TaN, is produced by direct synthesis of the elements at 1100°C. Very pure TaN has been produced by spontaneous reaction of lithium amide, L1NH2, and TaCl ( )- The compound is often added to cermets in 3—18 wt %. Ta N [12033-94-2] is used as a red pigment in plastics and paints (78). 

Device materials again may be conductive, semiconductive, dielectric, or resistive. Conductors are typically gold or aluminum, and resistors, sHicon monoxide or sHicon nitride. Tantalum nitride and nickel chromium are common resistor materials. 

Electrical Properties. Electrical properties are important for the corrosion protection of chip-on-board (COB) encapsulated devices. Accelerated temperature, humidity, and bias (THB) are usually used to test the embedding materials. Conventional accelerating testing is done at 85°C, 85% relative humidity, and d-c bias voltage. Triple-track test devices with tantalum nitride (Ta2N), titanium—palladium—gold (Ti—Pd—Au) metallizations with 76... 

Tantalum nitride (TaN) from the metal chloride reaction with nitrogen at 800-1500°C. 

Tantalum Nitride as Diffusion Barrier. Tantalum nitride (TaN) produced by MOCVD has excellent potential as a barrier material, comparable to TiN. The resistivity of TaN thin films can be lowered by rapid thermal annealing in nitrogen. 

Tantalum metal dust, exposure to, 24 334 Tantalum minerals, chemical compositions of, 24 315t. See also Tantalum ores Tantalum-Niobium International Study Center (TIC), 24 331 Tantalum nitrides, 24 335 Tantalum ores, 24 316. See also Tantalum minerals... 

M. Sheiif El-Eskandarany, K. Aoki, K. Suzuki, Formation of amorphous aluminum tantalum nitride powders by mechanical alloying, Appl. Phys. Lett. 60 (1992) 1562-1563. 

C. Stampfl and A. J. Freeman, Stable and Metastable Structures of the Multiphase Tantalum Nitride System, Phys. Rev. B 71 (2005), 024111. 

Titanium nitride and tantalum nitride present different resistances to the chemical reagents compared to their metals (these data are not available in the literature) but their oxidized species are the same. 

Studies from Japan related to the synthesis of nitrides start with the work by Hirao et al.22 24 The authors reported very low conversion ( 50-60%) for the synthesis of titanium and zirconium nitrides, even under 250 bar of nitrogen, and almost stoichiometric conversion of tantalum to tantalum nitride under 100 bar of nitrogen. 

M. Dopita, B. Wollein, D. Rafaja, W. Gruner, W. Lengauer. Layer-growth of tantalum nitrides by nitridation of Ta metal the basis of the preparation of a well-characterised nitrogen standard material // Defect Diffusion Forum.- 2001.- V. 194-199-P.1613-1618. 

TABLE 3. Average shear force of polybenzoxazole bonded to a tantalum nitride surface. 

Phase and Chemical COMPOsmoNS of SHS Tantalum Nitride Powders... 

Agrafiotis, C. C Puszynski, J. A., and Hlavacek, V., Experimental study on the synthesis of titanium and tantalum nitrides in the self-propagating regime. Combust. Sci. Tech., 76, 187 (1991). 

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