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Radiation resistance formulation

Precision injection molding where feasible, gamma radiation resistant formulations, and improved production traceability and quality. [Pg.592]

Application of the F-D theorem produced [122] several significant results. Apart from the Nyquist formula these include the correct formulation of Brownian motion, electric dipole and acoustic radiation resistance, and a rationalization of spontaneous transition probabilities for an isolated excited atom. [Pg.492]

The polymer TBSS is known to undergo radiation induced chain scission and provides an improvement in the sensitivity compared to resists formulated with polymers which do not undergo chain scission. The lithographic performance of a resist formulated from this polymer and 2,6-dinitrobenzyl tosylate acid generator is reported. [Pg.39]

The resist formulation was spin-coated onto a silicone wafer on which a bottom antireflective coating had been previously applied and then soft-baked for 60 seconds at 90°C on a hot plate to obtain a film thickness of 1000 nm. The resist film was then exposed to i-line radiation of 365 nm through a narrowband interference filter using a high-pressure mercury lamp and a mask aligner. Experimental samples were then baked for 60 seconds at 90°C on a hot plate and developed. The dose to clear, E0, which is the dose just sufficient to completely remove the resist film after 60 seconds immersion development in 2.38% aqueous tetramethyl ammonium hydroxide, was then determined from the measured contrast curve. Testing results are provided in Table 1. [Pg.591]

We shall employ the resistance formulation and note that the radiation can be written... [Pg.111]

Figure 6. Infrared spectra of films of the resist formulation on NaCl plates a) after coating, b) after exposure to 18 mJ/cnfi of 254 nm radiation and c) after exposure and baking briefly at 140°C. Figure 6. Infrared spectra of films of the resist formulation on NaCl plates a) after coating, b) after exposure to 18 mJ/cnfi of 254 nm radiation and c) after exposure and baking briefly at 140°C.
Based on the leaching data [40,69,83] as well as data on radiation resistance of fast neutron irradiated [84-85] and actinide-doped Synrocs [86-88], as well as individual synthetic phases and their natural analogues study [14-18,89-91] zirconolite- and pyrochlore-based ceramics have been proposed for immobilization of excess plutonium and the other actinides. Moreover, additional phases, which were not part of the Synroc formulation, have been considered because of their chemical durability and radiation resistance (e.g., murataite, zircon, garnet, monazite, britholite). Of particular interest are the zirconate pyrochlores, many of which are extremely radiation resistant [8,92]. Zirconolite-based ceramics. Zirconolite, ideally CaZrTi207, is a major actinide host phase in the Synroc-type ceramics. Study of natural and synthetic samples... [Pg.468]

As device dimensions continue to shrink, pattern resolution becomes of critical importance. In this regard, the use of radiation sources with maximized output in the mid-UV region (300-350 nm) would permit increased resolution if an appropriate resist could be utilized. In this regard, commercial resist formulations function inefficiently in this region for a variety of reasons. Accordingly, we have used semiemipirical quantum mechanical techniques to calculate the electronic absorption spectra of two of the most commonly employed chromophores and to computationally assess the effect of a variety of substituents. The results of these calculations have been used to drive a synthetic program designed to produce an efficient sensitizer for use in the mid-UV. [Pg.25]

When some or all of the phenyl rings are substituted with halogen (Scheme 6.11), the radiation sensitivity and the cross-linking efficiency of polystyrene can be enhanced significantly. Negative electron-beam resist formulated from iodi-nated and chlorinated polystyrene and based on this approach have been reported. Sensitivity of about 2 p.C/cm and resolution of about 1-p.m features have been demonstrated with these materials. ... [Pg.222]

Scheme 7.19 Incorporating acyloximino groups into PMMA polymeric resins enhances the photospeed to UV radiation of resists formulated with them. Scheme 7.19 Incorporating acyloximino groups into PMMA polymeric resins enhances the photospeed to UV radiation of resists formulated with them.
Figure 11.19 shows a typical family of IR spectra of a film of resist formulated with triphenylsulfonium hexafluoroantimonate and poly(CBN-co-NBCA), samples of which were exposed to 248-nm radiation doses of 0-50 mJ/cm and... [Pg.495]

Figure 11.21 Arrhenius plot for resist formulated with poly(CBN-co-NBCA) and 3 wt% of triphenylsulfonium hexafluoroantimonate (TPSHFA), and exposed under 248-nm radiation. (Reprinted with permission from American Chemical Society. )... Figure 11.21 Arrhenius plot for resist formulated with poly(CBN-co-NBCA) and 3 wt% of triphenylsulfonium hexafluoroantimonate (TPSHFA), and exposed under 248-nm radiation. (Reprinted with permission from American Chemical Society. )...
The principal criteria for the formulations were mechanical and thermal stability, homogeneity, radiation resistance, high containment capacity, low volume, corrosion resistance, low leachability, easy fabrication (mastered technology), and flexibility with regard to the composition of waste to be conditioned. [Pg.96]

Active characterization testing was conducted on hundreds of active glass formulations using alpha doped and beta tracer glasses to determine radiation resistance, leach rates, and the thermal stability and volatility of the glass. In... [Pg.96]

CAS 2156-97-0 EINECS/ELINCS 218-463-4 Uses Flexibilizer, adhesion promoter, water resistance aid in coatings, all radiation-curable formulations Features Good weatherability very low VOC Properties Gardner 2 max. clear liq. dens. 7.3 Ib/gal vise. 6-10 cps acid no. 0.5 max. sapon. no. 225-235 flash pt. > 200 F 0.1% max. moisture Storage Store in a cool, shaded, well ventilated area away from direct sources of heat and sunlight Photomer 4814 [Cognis/Coatings Inks]... [Pg.626]

Figure 6. Arrhenius plot for resist formulated with poly(CBN-co-MAH) and exposed under 193 nm radiation. Figure 6. Arrhenius plot for resist formulated with poly(CBN-co-MAH) and exposed under 193 nm radiation.

See other pages where Radiation resistance formulation is mentioned: [Pg.130]    [Pg.6771]    [Pg.130]    [Pg.6771]    [Pg.55]    [Pg.861]    [Pg.147]    [Pg.54]    [Pg.42]    [Pg.55]    [Pg.1205]    [Pg.17]    [Pg.225]    [Pg.36]    [Pg.106]    [Pg.190]    [Pg.55]    [Pg.181]    [Pg.182]    [Pg.277]    [Pg.414]    [Pg.101]    [Pg.607]    [Pg.121]    [Pg.129]    [Pg.121]    [Pg.144]    [Pg.190]    [Pg.149]    [Pg.121]    [Pg.387]    [Pg.2682]   
See also in sourсe #XX -- [ Pg.218 ]




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