Quantum semiconductor

C. Weisbuch, B. Vinter, Quantum Semiconductor Structures Fundamentals and Applications, Academic Press, London, 1991. 

Weisbuch C. and Vinter B. (1991), Quantum Semiconductor Structures, Academic Press, New York. 

Dameron CT, Reese RN, Mehra RK, Kortan AR, Carroll PJ, Steigerwald ML, Brus LE, Winge DR (1989) Biosynthesis of cadmium sulphide quantum semiconductor crystallites. Nature... 

Steigerwald, M. L., Brus, L. E. (1989). Synthesis, stabilization, and electronic structure of quantum semiconductor nanoclusters. Annual Review of Materials Science, 19, 471-495. 

M L. Striegerwald, L.E. Bms, Synthesis, Stabilization, and Electronic Stmcture of Quantum Semiconductor Nanoclusters, Annual Review of Materials Science 19 (1989) 471-495 doi 10.1146/annurev.ms.l9.080189.002351. 

Johnson, E.A. (2001). Electrons in quantum semiconductor structures An introduction, in Low-dimensional Semiconductor Structures Fundamentals and Device Applications, ed. K. Barnham, D. Vvedensky Cambridge, UK Cambridge University Press, pp. 56-78. 

Irradiation of a semiconductor with light of quantum energy greater than the band gap can lead to electron-hole separation. This can affect adsorption and lead to photocatalyzed or photoassisted reactions [187]. See Section XVIII-9F for some specifics. 

Tunnelling is a phenomenon that involves particles moving from one state to another tlnough an energy barrier. It occurs as a consequence of the quantum mechanical nature of particles such as electrons and has no explanation in classical physical tenns. Tuimelling has been experimentally observed in many physical systems, including both semiconductors [10] and superconductors [11],... 

A logical consequence of this trend is a quantum w ell laser in which tire active region is reduced furtlier, to less tlian 10 nm. The 2D carrier confinement in tire wells (fonned by tire CB and VB discontinuities) changes many basic semiconductor parameters, in particular tire density of states in tire CB and VB, which is greatly reduced in quantum well lasers. This makes it easier to achieve population inversion and results in a significant reduction in tire tlireshold carrier density. Indeed, quantum well lasers are characterized by tlireshold current densities lower tlian 100 A cm . ... 

Figure C2.17.11. Exciton energy as a function of particle size. The Bms fonnula is used to calculate the energy shift of the exciton state as a function of nanocrystal radius, for several different direct-gap semiconductors. These estimates demonstrate the size below which quantum confinement effects become significant.

Brus L E 1993 NATO ASI School on Nanophase Materials ed G C Had]lpanayls (Dordrecht Kluwer) Allvisatos A P 1996 Semiconductor clusters, nanocrystals and quantum dots Science 271 933 Heath J R and Shlang J J 1998 Covalency In semiconductor quantum dots Chem. See. Rev. 27 65 Brus L 1998 Chemical approaches to semiconductor nanocrystals J. Phys. Chem. Solids 59 459 Brus L 1991 Quantum crystallites and nonlinear optics App/. Phys. A 53 465... 

Bawendl M G, Stelgerwald M L and Brus L E 1990 The quantum mechanics of larger semiconductor clusters ( quantum dots ) Ann. Rev. Phys. Chem. 41 477... 

Brus L 1986 Zero-dimenslonal excltons In semiconductor clusters IEEE J. Quantum Electron. 22 1909... 

Thushigh internal quantum efficiency requires short radiative and long nonradiative lifetimes. Nonradiative lifetimes are generally a function of the semiconductor material quaUty and are typically on the order of microseconds to tens of nanoseconds for high quahty material. The radiative recombination rate, n/r, is given by equation 4 ... 

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