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Self-Formation of Semiconductor Quantum Dots

Department of Engineering Science, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan e-mail kyama ee.uec.ac.jp [Pg.93]

Ohtsu (ed.), Progress in Nanophotonics 1, Nano-Optics and Nanophotonics, DOl 10.1007/978-3-642-17481-0 3, Springer-Verlag Berlin Heidelberg 2011 [Pg.93]

Self-assembly principles of the formation of multiporphyrin arrays are extended to anchor the porphyrin triads on semiconductor CdSe/ZnS quantum dot (QD) surface. Comparing with individual counterparts (QD, pyridylsubstituted porphyrin H2P(p-Pyr)4, and Zn-octaethylporphyrin chemical dimer (ZnOEP Ph), the formation of heterocomposites QD-porphyrin triad results in the specific quenching of QD photoluminescence, accompanied by the dimer fluorescence strong quenching (Tsd 1-7 ps due to energy and/or electron transfer) and the noticeable decease of the extra-ligand H2P(p-Pyr)4 fluorescence efficiency by 1.5-2 times via hole transfer H2P—>dimer. [Pg.133]

P. Pachakapat, K. Yamaguchi, Self-Formation Control of Low-Density InAs Quantum-Dots. The 34th International Symposium on Compound Semiconductors (iscs2007), Kyoto, 15-18 Oct 2007, p. 172... [Pg.124]

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Quantum dot semiconductor

Quantum semiconductors

Self formation

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