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Preparation boron carbides

Preparation. Boron carbide is most commonly produced by the reduction of boric oxide with carbon in an electric furnace between 1400 and 2300°C. In the presence of carbon, magnesium reduces boric oxide to boron carbide at 1400—1800°C. The reaction is best carried out in a hydrogen atmosphere in a carbon tube furnace. By-product magnesium compounds are removed by acid treatment. [Pg.220]

MacKinnon and Wickens (37) have prepared boron carbide in the form of submicron particles by injecting BCI3, Hg, and CH into the tail of a 20-kW argon RF plasma. A 3 factorial experiment to study the effect of operating variables was carried out a preliminary analysis of which gave the following indications ... [Pg.99]

Hafnium Boride. Hafnium diboride [12007-23-7] HfB2, is a gray crystalline soHd. It is usually prepared by the reaction of hafnium oxide with carbon and either boron oxide or boron carbide, but it can also be prepared from mixtures of hafnium tetrachloride, boron trichloride, and hydrogen above 2000°C, or by direct synthesis from the elements. Hafnium diboride is attacked by hydrofluoric acid but is resistant to nearly all other reagents at room temperature. Hafnium dodecaboride [32342-52-2] has been prepared by direct synthesis from the elements (56). [Pg.444]

Research-grade material may be prepared by reaction of pelleted mixtures of titanium dioxide and boron at 1700°C in a vacuum furnace. Under these conditions, the oxygen is eliminated as a volatile boron oxide (17). Technical grade (purity > 98%) material may be made by the carbothermal reduction of titanium dioxide in the presence of boron or boron carbide. The endothermic reaction is carried out by heating briquettes made from a mixture of the reactants in electric furnaces at 2000°C (11,18,19). [Pg.117]

A number of boron chemicals are prepared directly from boric acid. These include synthetic inorganic borate salts, boron phosphate, fluoborates, boron ttihaHdes, borate esters, boron carbide, and metal aHoys such as ferroboron [11108-67-1]. [Pg.194]

Preparation. The simplest method of preparation is a combination of the elements at a suitable temperature, usually ia the range of 1100—2000°C. On a commercial scale, borides are prepared by the reduction of mixtures of metallic and boron oxides usiag aluminum, magnesium, carbon, boron, or boron carbide, followed by purification. Borides can also be synthesized by vapor-phase reaction or electrolysis. [Pg.219]

Boron Triiodide. Boron ttiiodide is not manufactured on a large scale. Small-scale production of BI from boron and iodine is possible in the temperature range 700—900°C (70—72). Excess I2 can be removed as Snl by reaction with Sn, followed by distillation (71). The reaction of metal tetrahydroborates and I2 is convenient for laboratory preparation of BI (73,74). BI can also by synthesized from B2H and HI in a furnace at 250°C (75), or by the reaction of B with excess Agl or Cul between 450—700°C, under vacuum (76). High purity BI has been prepared by the reaction of I2 with mixtures of boron carbide and calcium carbide at elevated temperatures. [Pg.223]

The reduction of a metal oxide or other metal compound by C, B or boron carbide requires higher T than in the other methods available for boride preparation. [Pg.265]

Boron-containing nonoxide amorphous or crystalline advanced ceramics, including boron nitride (BN), boron carbide (B4C), boron carbonitride (B/C/N), and boron silicon carbonitride Si/B/C/N, can be prepared via the preceramic polymers route called the polymer-derived ceramics (PDCs) route, using convenient thermal and chemical processes. Because the preparation of BN has been the most in demand and widespread boron-based material during the past two decades, this chapter provides an overview of the conversion of boron- and nitrogen-containing polymers into advanced BN materials. [Pg.121]

Surfaces of synthetic diamond, doped with boron, are electrically conducting and show promise as very inert elccfrode materials [24]. Boron carbide (B C) has been used as an anode material but tliis cannot be conveniently prepared with a large surface area [25]. [Pg.7]

Boron carbide is prepared by reduction of boric oxide either with carbon or with magnesium in presence of carbon in an electric furnace at a temperature above 1,400°C. When magnesium is used, the reaction may be carried out in a graphite furnace and the magnesium byproducts are removed by treatment with acid. [Pg.125]

The pentaborane cage structure -B5H9- has been used as a side group in the preparation of vinyl-type polymers, but only of relatively low molecular weight. Pyrolysis of this material gives primarily boron carbide, B4C. [Pg.269]

Boron carbide is also a very light and strong material. It can be prepared by reacting carbon yam with BClj and H2 at high temperatures, i.e. a CVD process (Economy and Lin, 1977). The chemical reaction involved is... [Pg.173]

Elemental boron is a refractory material that is usually isolated either as a shiny black crystalline solid or a softer, browner, more impure amorphous solid. Reduction of readily available boron compounds containing boron oxygen bonds to elemental boron is energy intensive and costly. This has limited the extent of conunercial use of this material. Many related refractory boron compounds have been prepared and characterized including metal borides, boron carbides, boron nitrides, and various boron metal alloys. These refractory materials and elemental boron are also discussed in some detail in the article Borides Solid-state Chemistry. Other general references are available on elemental boron and other refractory boron compounds. " ... [Pg.419]

Boron Trichloride. Boron trichloride is prepared commercially by the chlorination of boron carbide (equation 15). Direct chlorination of boric acid or a sodium borate in the presence of carbon is an alternative method. Most of the boron trichloride produced is converted to filaments of elemental boron by chemical vapor deposition (CVD) on tungsten wire in a hydrogen atmosphere. Numerous laboratory preparations of boron trichloride have been reported. One of the most convenient is the halogen exchange reaction of aluminum chloride with boron trifluoride or a metal fluoroborate. [Pg.439]

Boron Tribromide and Boron Triiodide. Boron tribromide is prepared commercially in relatively small quantities by the bromination of boron carbide, and its commercial use is limited. No commercial use for boron triiodide has been reported. Laboratory quantities of boron tribromide can be prepared by the reaction of aluminum bromide with boron trifluoride or a metal fluoroborate. Boron triiodide can be prepared in small quantities by the reaction of boron or a metal tetrahydroborate with iodine. [Pg.439]


See other pages where Preparation boron carbides is mentioned: [Pg.48]    [Pg.48]    [Pg.290]    [Pg.191]    [Pg.224]    [Pg.602]    [Pg.222]    [Pg.223]    [Pg.302]    [Pg.313]    [Pg.167]    [Pg.126]    [Pg.191]    [Pg.224]    [Pg.253]    [Pg.75]    [Pg.111]    [Pg.481]    [Pg.290]    [Pg.345]    [Pg.473]    [Pg.570]    [Pg.315]    [Pg.135]    [Pg.136]    [Pg.420]    [Pg.421]    [Pg.424]   
See also in sourсe #XX -- [ Pg.837 ]




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