Poly annealing

The commercial poly-(4-methypent-1-ene) (P4MP1) is an essentially isotactic material which shows 65% crystallinity when annealed but under more normal conditions about 40%. For reasons given later the material is believed to be a copolymer. In the crystalline state P4MP1 molecules take up a helical disposition and in order to accommodate the side chains require seven monomer units per two turns of the helix (c.f. three monomers per turn with polypropylene and polybut-I-ene). Because of the space required for this arrangement the density of the crystalline zone is slightly less than that of the amorphous zone at room temperature. 

The substituted five-ring OPVs have been processed into poly crystal line thin films by vacuum deposition onto a substrate from the vapor phase. Optical absorption and photolumincscence of the films are significantly different from dilute solution spectra, which indicates that intermolecular interactions play an important role in the solid-state spectra. The molecular orientation and crystal domain size can be increased by thermal annealing of the films. This control of the microstruc-ture is essential for the use of such films in photonic devices. 

Poly(arylene ether ketone) and poly(arylene ether sulfone) were also tried to be incorporated into the hybrids with silica gel by means of the sol-gel procedure [19, 20], For example, triethoxysilyl-terminated organic polymer was subjected to co-hydrolysis with tetraethoxysilane. A systematic change in mechanical and physical properties of the hybrid glass has been found with the content of organic polymer and the annealing temperatures. 

Fig. 6. Hydrogen depth profile of a thin film of poly(p-methylstyrene)(H)/ PS(D) diblock copolymer, PMS(H)-b-PS(D), on a silicon wafer as obtained by the l5N-NRA technique [57]. The sample has been annealed for 1 h at 140 °C. PMS(H) is largely enriched at the surface. The solid line is a guide to the eye...

Fig. 7a, b. PMIM-image of (a) a poly-p-bromostyrene surface [118], (b) a PS/polybutadiene diblock copolymer, PS-b-PB, at approximately 100 fold magnification. The lateral resolution is of the order of 1 pm while the height resolution is of the order of 0.6 nm. The root-mean-square roughness averaged over the area shown is 0.8 nm in (a) close to the resolution limit of the technique. It is much larger (10 nm) in (b) due to the formation of steps after annealing. The scale in z-direction in (a) and (b) is different by a factor of 7... 

Fig. 10. X-ray reflectivity curves of polystyrene (PS)/poly-p-bromostyrene (PBrS) on a glass substrate before (solid line) and after annealing for 13 h at 130 °C (dashed tine) [191]. The width of the interface changes from 1.3 nm to 2.0 nm due to interfacial mixing of components. The X-ray wavelength is 0.154 nm and films have a thickness of 37.8 nm (PS) and 45.0 nm (PBrS), respectively...

FIGURE 20.10 (a,b) Phase images of cryo-ultramicrotomed surfaces of triblock copolymer styrene and ethylene-butylene (SEES) samples of neat material and loaded with oil (40 wt%), respectively. (c,d) Phase images of film of triblock copolymer poly(methyl methacrylate-polyisobutylene-poly(methyl methacrylate) (PMMA-PIB-PMMA) immediately after spin-casting and after 3 h annealing at 100°C, respectively. Inserts in the top left and right comers of the images show power spectra with the value stmctural parameter of microphase separation. 

Figure 5.11 shows cross-sectional TEM images of the annealed polysilane films on poly-Si islands. After spin coating polysilane under the same condi-... 

Sameshima, T. Usui, S. Sekiya, M. 1986. XeCl excimer laser annealing used in the fabrication of poly-Si TFTs. IEEE Electron Device Lett. 7 276-278. 

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