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Polish phase

Pattern dependency concerns arise at two levels in STI CMP [67] during the oxide overburden polish phase, and when the nitride layer is exposed. In the first stage, the process is similar to interlevel dielectric (ILD) CMP and the characterization and modeling methodologies presented in the previous section are applicable. Once the nitride is exposed, two different materials exist at the same level, and pattern dependency manifestation is more complex. [Pg.118]

The Bevrox Biotreatment technology consists of three phases the primary contact, or mixing phase the primary digestion phase and the polishing phase. The equipment is mobile and modular a project may require from 2 to 12 reactors. The technology does not treat metals. [Pg.422]

In the polishing phase the objective is to achieve high purity by removing any remaining trace impurities or closely related substances. [Pg.10]

In the polishing phase the focus is almost entirely on high resolution to achieve final purity. Most contaminants and impurities have already been removed except for trace impurities such as leachables, endotoxins, nucleic acids or viruses, closely related substances such as microheterogeneous structural variants of the product, and reagents or aggregates. To achieve resolution it may be necessary to sacrifice sample load or even recovery (by peak cutting). [Pg.40]

Polish phase Generate PFR trajectories from each point in conv(X) to produce a final (smooth) boundary. [Pg.250]

To reach a large wear rate, a coarse grain size and large tools are used. The last point is of essential importance to avoid ripple structures because they become visible in only the final polishing phase. The tool size and stroke amplitude define the final surface smoothness with respect to short-wave errors. [Pg.185]

Silicon is produced by a well-controlled Czochralski crystal growth process in a very clean environment, that is, class of 1 or 10. In this process, a small seed crystal is dipped into a highly purified silicon melt. This seed is slowly pulled while the crucible containing the melt is rotated. The silicon crystal grows along the selected orientation of the seed to the rod. A cylindrical crystal is obtained from which slices are cut. This is followed by the atomic polishing phase. The side of one cubic face is 5.43A. The mechanical, electrical, and thermal properties of silicon have been presented in Table 10.1. [Pg.378]

Fig. 5. A 90° polished cross section of a production white titania enamel, with the microstructure showing the interface between steel and direct-on enamel as observed by reflected light micrography at 3500 x magnification using Nomarski Interface Contrast (oil immersion). A is a steel substrate B, complex interface phases including an iron—nickel alloy C, iron titanate crystals D, glassy matrix E, anatase, Ti02, crystals and F, quart2 particle. Fig. 5. A 90° polished cross section of a production white titania enamel, with the microstructure showing the interface between steel and direct-on enamel as observed by reflected light micrography at 3500 x magnification using Nomarski Interface Contrast (oil immersion). A is a steel substrate B, complex interface phases including an iron—nickel alloy C, iron titanate crystals D, glassy matrix E, anatase, Ti02, crystals and F, quart2 particle.
Adsorbed molecules are more strongly held at the sites where the weakest metal-metal bonding is to be found, and these conespond to the active sites of Langmuir. A demonstration of this effect was found in smdies of the adsorption of H2S from a H2S/H2 mixture on a single crystal of copper of which die separate crystal faces had been polished and exposed to die gas. The formation of copper sulphide first occuiTed on die [100] and [110] planes at a lower H2S partial pressure dran on die more densely packed [111] face. Thus die metal atoms which are less strongly bonded to odrer metal atoms can bond more strongly to die adsorbed species from die gas phase. [Pg.123]

A whole science, called metallography, is devoted to this. The oldest method is to cut the alloy in half, polish the cut faces, etch them in acid to colour the phases differently, and look at them in the light microscope. But you don t even need a microscope to see some grains. Look at any galvanised steel fire-escape or cast brass door knob and you will see the grains, etched by acid rain or the salts from people s hands. [Pg.27]

Sketch the structures that you would expect to see if you looked at polished sections of the samples under a reflecting light microscope. Label the phases, and any other features of interest. You may assume that each specimen has been cooled moderately slowly from a temperature of 1100°C. [Pg.124]

The obvious application of microfocus Raman spectroscopy is the measurement of individual grains, inclusions, and grain boundary regions in polycrystalline materials. No special surface preparation is needed. Data can be obtained from fresh fracture surfeces, cut and polished surfaces, or natural surfeces. It is also possible to investigate growth zones and phase separated regions if these occur at a scale larger than the 1-2 pm optical focus limitation. [Pg.438]

The column. The columns most commonly used are made from precision-bore polished stainless steel tubing, typical dimensions being 10-30 cm long and 4 or 5 mm internal diameter. The stationary phase or packing is retained at each end by thin stainless steel frits with a mesh of 2 jum or less. [Pg.223]

D. Blum Just going a bit further, the liquid-phase methanation process now uses one reactor. You can or you cannot use a polishing reactor as the economics dictate. You can actually go right to pipeline quality gas in one reactor, which is equivalent to about 99.8% conversion of a 20% CO feed gas. We envision at this moment that combined shift-methanation could be done in the same single reactor. It would obviously require lower feed gas rates so you may need two of these reactors. We don t exactly have the numbers yet. I think that s one of the areas that deserves future work. [Pg.171]


See other pages where Polish phase is mentioned: [Pg.20]    [Pg.590]    [Pg.339]    [Pg.25]    [Pg.92]    [Pg.251]    [Pg.948]    [Pg.391]    [Pg.20]    [Pg.590]    [Pg.339]    [Pg.25]    [Pg.92]    [Pg.251]    [Pg.948]    [Pg.391]    [Pg.65]    [Pg.209]    [Pg.409]    [Pg.123]    [Pg.248]    [Pg.216]    [Pg.2057]    [Pg.323]    [Pg.129]    [Pg.84]    [Pg.215]    [Pg.277]    [Pg.433]    [Pg.527]    [Pg.367]    [Pg.271]    [Pg.460]    [Pg.311]    [Pg.848]    [Pg.383]    [Pg.245]    [Pg.251]    [Pg.143]    [Pg.640]    [Pg.94]   
See also in sourсe #XX -- [ Pg.250 , Pg.251 ]




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