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Polar nitrides

Ion nitriding, 16 205 Ionomer blends, 14 476-478 Ionomer food packaging, 13 44 Ionomer peak, 14 464 Ionomer properties, effects of polar plasticizers on, 14 479 Ionomers, 14 460-489... [Pg.489]

Fig. 13. Lattice parameters of the actinide nitrides from LMTO (labelled Pauli pramagnetic), RLMTO (labelled Dirac) and LMTO spin polarized (labelled Pauli spin polarized) calculations. The black filled circles are the experimental lattice parameters... Fig. 13. Lattice parameters of the actinide nitrides from LMTO (labelled Pauli pramagnetic), RLMTO (labelled Dirac) and LMTO spin polarized (labelled Pauli spin polarized) calculations. The black filled circles are the experimental lattice parameters...
The trend in lattice parameter across the actinide nitride series is reproduced by an energy band theory in which it is assumed that the f-electrons are itinerant. The results with and without spin polarization do not differ greatly until AmN is reached but in this... [Pg.291]

The c/a ratio also correlates with the differences of the electronegativities the compounds with the greatest differences show the largest departure from the ideal c/a ratio [3], The distortions were explained by long-range polar interactions. Only wurtzite structures with c/a ratios lower than the ideal value of 1.633 are stable (otherwise the sphalerite structure is a stable one). The structure parameters for the Ill-nitrides are given in TABLE 1. [Pg.6]

For epitaxial layers on sapphire, their polarity depends on the buffer structure [9], Most of such layers contain defects where the polarity is reversed [10], For SiC substrates, the nitride layers reproduce the substrate polarity the Si-face is overgrown with a Ga-terminated layer and the C-face is overgrown with an N-terminated layer. [Pg.7]

Before growth of the buffer layer, nitridation of the sapphire surface is sometimes carried out. This is a heat treatment of the sapphire surface in ammonia atmosphere at high temperatures as described in the caption of FIGURE 4. This process, when conducted at 1150°C for 10 min, forms an extremely thin AIN layer ( 3 ML -0.7 nm) with a surface as smooth as the heat-treated sapphire surface. N atoms of AIN are directly bonded to A1 atoms of sapphire and the AIN layer has A1 polarity though the surface is mostly terminated by N atoms [28],... [Pg.384]

The surface films react chemically with solution species, thus leading to their dissolution as reaction products [17]. Surface species such as oxides, hydroxides, and nitrides may be highly nucleophilic, while many polar aprotic solvents are highly electrophilic. Hence, chemical dissolution of pristine surface films on active metals in solutions is a very probable route [18]. [Pg.298]

Compounds, such as the polyhalides and polysulphides, formally also the azides, could be regarded as produced by the attachment of one or more neutral non-polar halogen, sulphur or nitrogen molecules to a halogen, sulphide or nitride ion. With the last one this way of representation is definitely incorrect the azide-ion N3 is linear in contrast to the triangular structure to be expected for ionic bonding. [Pg.75]

Boron nitride forms the same structure that graphite does, as indicated in Fig. 3-10. The sp -hybrid energy-difference may be evaluated by using the Solid State Table and used to estimate the corresponding. It is possible to treat the counterparts of all the properties of polar tetrahedral semiconductors also for the... [Pg.91]

Consider hexagonal boron nitride, shown in Fig. 3-10. Define a hybrid covalent and hybrid polar energy for this structure, in analogy with the corresponding definitions for tetrahedral solids in Eqs. (3-4) and (3-6). Compare the polarity obtained from these values with that of tetrahedral BN, listed in Table 7-2. Take d = 1.42 A as in graphite. Notice that many values arc modified by having sp hybrids rather than sp hybrids. [Pg.95]

Preparation of Preceramic Polysilazanes. At MIT (Massachusetts Institute of Technology), our initial research on silicon-based preceramic polymers was aimed at developing a precursor for silicon nitride. To this end, we studied the ammonolysis of dichlorosilane, H2SiCl2 (ii). This reaction had already been carried out on a millimolar scale in the gas phase and in benzene solution by Stock and Somieski in 1921 (12). We found that this reaction gave a much better yield of soluble ammonolysis product when it was carried out in more polar solvents such as dichloromethane or diethyl ether (ii). [Pg.570]

Pauzauskie PJ, Talaga D, Seo K, Yang P, Lagugne-Labarthet F (2005) Polarized Raman confocal microscopy of single gallium nitride nanowires. J Am Chem Soc 127 17146-17147... [Pg.441]


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See also in sourсe #XX -- [ Pg.23 ]




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Polarity hexagonal boron nitride

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