Gallium nitride nanowires

Zhong, Z. Qian, F. Wang, D. Lieber, C. M. 2003. Synthesis of p-type gallium nitride nanowires for electronic and photonic nanodevices. Nano Lett. 3 343-346. 

Pauzauskie PJ, Talaga D, Seo K, Yang P, Lagugne-Labarthet F (2005) Polarized Raman confocal microscopy of single gallium nitride nanowires. J Am Chem Soc 127 17146-17147... 

Qian, F. Li, Y. Gradecak, S. Wang, D. Barrelet, C.J. Lieber, C.M. Gallium nitride-based nanowire radial heterostructures for nanophotonics. Nano Lett. 2004, 4, 1975-1979. 

Very recently Chen and coworkers [56] demonstrated the use of ElS for label-free electrochemical detection of DNA sequences relevant to anthrax lethal factor on gallium nitride (GaN) nanowires. The GaN nanowires were grown on a silicon substrate coated with Au catalyst using Ga as the source material and NH3 as the reactant gas in a tubular furnace via air pressure chemical vapor deposition. ElS measurements of the "as grown" GaN nanowires, observed in the Nyquist plot in Fig. 14.12A, exhibited a semicircle and a straight vertical line, indicative of finite impedance at the GaN/electrol3Ae... 

---