Plasma chemical vaporization machining

Y. Nakahama, N. Kanetsuki, T. Funaki, M. Kadono, Y. Sano, K. Yamamura, K. Endo, Y. Mori, Etching characteristics of GaN by plasma chemical vaporization machining. Surf. Interface Anal. 40 (2008) 1566—1570. 

Y. Sano, M. Watanabe, T. Kato, K. Yamamura, H. Mimura, K. Yamauchi, Temperature dependence of plasma chemical vaporization machining of sihcon and sihcon carbide. Mater. Sci. Forum 600-603 (2009) 847-850. 

Y. Sano, T.K. Doi, S. Kurokawa, H. Aida, O. Ohnishi, M. Uneda, K. Shiozawa, Y. Okada, K. Yamauchi, Dependence of GaN removal rate of plasma chemical vaporization machining on mechanically introduced damage. Sens. Mater. 26 (2014) 429—434. 

Plasma Chemical Vaporization Machining and Elastic Emission Machining... 

Plasma chemical vaporization machining (PCVM) and elastic emission machining (EEM) are ultraprecision machining methods based on chemical reactions that were developed in our laboratory. Their concepts and the results of basic research were described in a previous edition of Crystal Growth Technology [1, 2]. In this chapter, the results on both PCVM and EEM achieved since the first pubH-cation are described. In addition, a new abrasive-free planarization method called catalyst-referred etching (CARE) is introduced in the last part of this chapter. 

Y. Sano, 2000, Development of plasma chemical vaporization machining . 

A. Kubota, Y. Mori, 2006, Polishing characteristics of silicon carbide by plasma chemical vaporization machining , Jpn. ]. Appl. Phys. 45, 8277-8280. 

The study of fabrication of the X-ray mirror by numerically controlled plasma chemical vaporization machining Development of the machine for the X-ray mirror fabrication . Rev. Sci. Instrum. 71, 4620-4626. 

Y. Mori, 2003, Fabrication of elliptical mirror at nanometer-level accuracy for hard x-ray focusing by numerically controlled plasma chemical vaporization machining . Rev. 

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