Piranha water

Concentrated oxidizing acids (sulfuric, perchloric or nitric acid, or mixtures thereof) are also suitable to oxidize noncovered as well as prefunctionahzed diamond materials. Both hydroxylated and carboxylated surfaces can be generated this way. However, characterizing exactly the kind of carbonyl function with either XPS or IR-spectroscopy is rather complicated. An actual example is the reaction with so-called piranha water, that is, a mixture of concentrated sulfuric acid and... 

Si wafers were either cleaned in Piranha solution, washed with deionized water and dried with Ar gas, or used without cleaning. The samples were then inserted into the high temperature tube furnace. Since SAN can form extremely fast, we believe that SAN existed in all samples. When the furnace temperature was set between 1035 and 1100°C, SiNW were formed. 

You walk over to a tub of water in the corner of your office. You used to keep piranha in it, but years ago all the fish died. It was just too difficult getting sufficient food for them. You allowed them to cannibalize themselves until there was only one fish left, and, alas, he finally sue-... 

H2S0,/H202 (4 1), 120-150 °C SPM (Sulfuric acid, hydrogen Peroxide, DI water Mixture), often called Piranha Removal of organic carbon... 

Multilayer films were fabricated directly on one side of preliminary cleaned in a piranha solution quartz crystal resonators with gold working surface having the basic oscillation frequency of 5 MHz. The resonators were covered with a PEI/PSS layer if needed. The adsorption of PEI and PSS was carried out from 1 mg/mL polyelectrolyte solutions. Each adsorption step was followed by washing the resonator with the film in distilled water to remove an excess polyelectrolyte. 

One of the most common methods of cleaning surfaces for subsequent sealing is the use of the so-called "piranha clean, which involves emersion in a mixture of H2SO4 and H2O2 (3 1) followed by washing with deionized water. When this method is misuitable (e.g., the device contams metal electrodes), then alternative methods—such as treatment of tlie surfaces with oxygen plasma or laser radiation —have been used. 

Gate Piranha clean Gate evaporation Photo Etch Strip 30 minutes in fresh, hot solution 5nm Cr/lOOnm An (e-beam or thermal) Gate mask KI, rinse, chromium etchant, rinse Soak in stripper 10 min, rinse in water soak in fresh stripper 10 min, rinse in water, dry... 

The quartz plates were preliminary cleaned and hydrophilized using a standard technique ("piranha", RCA). Protamine sulfate/carboxymethylcellulose (PtS/CMC) films were fabricated by the layer-by-layer (LbL) method from 1.5 mg/mL solutions of PtS (Mw 5000) and CMC (Mw 250000) in distilled water at pH 7.0. The method is described in details elsewhere [8]. The films containing up to 20 (PtS/CMC) bilayers were used for testing of dye adsorption. 

The substrates, silicon wafers, were cleaned in piranha solution (cone H2S04/30%H202 4 1 v/v), washed thoroughly with boiling water, and dried under nitrogen. In order to ensure covalent attachment of the MIP microstructures to the wafer support, the silicon wafers were previously treated with 3-aminopropyltri-methoxysilane. 

With Si surfaces that are not hydrogen passivated, a thorough cleaning pretreatment should be applied to the Si slides, such as cleaning in Piranha solution (at 90 C) for 5 min, rinsing with Millipore water, and drying under nitrogen [45, 46]. 

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