Pinning frequency

Some power supply control ICs have synchronization inputs for this purpose. For those ICs which have an oscillator, but not a synchronization pin, the circuit in Figure 3-55 can be used. The frequency on the IC must be set lower than the synchronization signal. The sync signal causes the oscillator to prematurely time-out. 

The minimum operating frequency of the control IC is set by the combination of the R and C on the oscillator pin. First one select the oscillator capacitor from a graph. The discharge period to produce a 200 kHz period (5 qS) can be produced with a 200 to 300 pF capacitor. Make Cose = 220 pF. The oscillator resistor is calculated from... 

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If the high-frequency decoupling is poor, the only way to check for it is to put a 0.1 pF capacitor right next to the pins of the IC and see if the problem goes away. There is almost no way we can ever really see the cause of that sort of problem on any of our instruments. We have to deduce it. 

What are the reasons for clock instability High-frequency noise is always generated at turn-on and turnoff in any switcher. This noise can infiltrate into the IC via various pins. It can be very hard to filter out and control. You may need to ultimately simply avoid turning the Fet OFF too dramatically. In most switchers, the turn-on transition is traditionally delayed (or slowed) just a little, so as to allow the output/catch diodes to recover... 

Picosecond pedestal, 143 Pin-hole camera, 128 Plasma channels, 112, 147, 148 Plasma defocusing, 84, 91 Plasma frequency, 166 Plasma index of refraction, 147 Plasma mirror (PM) technique, 194 Plasma wakefield acceleration, 172 Plasma wavelength, 166 Plasma-induced effects, 83 Polarization, 97 Polarization control, 87 Ponderomotive force, 170 Population inversions, 19 Post-irradiation spectroscopy, 156 Pre-pulse, 143 Propagation, 81 Protein, 102 Pump depletion, 151... 

The actual limit of the summation is the extent of the weighting filter. Zero padding is used to ensure that the discretized matrices have sizes which are a power of two so that the computation can be done in the frequency domain using fast fourier transform (FFT) techniques. The effective discretized density, pin, Wj), is then given by... 

The frequency is fixed at 50 kHz, with a 50% duty cycle. The noninverting terminal of the error amplifier is tied to the reference voltage (5.1V) and the inverting terminal is tied to ground, so that the oscillator controls the pulse termination. The output signal appears at Aout (pin 11). 

Redox potential data frequently correlate with parameters obtained by other spectroscopic measurements. The correlation of E° potentials with gas-phase ionization potentials has already been briefly discussed. Electronic transitions observed by UV-visible spectroscopy involve the promotion of an electron from one orbital to another and this can be viewed as an intramolecular redox reaction. If the promotion involves the displacement of an electron from the HOMO to the LUMO, then the redox potentials for the reduction of the compound, °REd, and for its oxidation, °ox, are of importance. For a closely related series of compounds, trends in oxidation and reduction potentials can be related to shifts in the absorption frequency, v. If the structural perturbation causes the HOMO and the LUMO to rise or fall in energy in tandem, then (E°RED — E°ox) will remain constant in such cases the HOMO—LUMO frequency (energy) will be essentially independent of the structural perturbation. Where there is a differential influence of the perturbation on the HOMO and the LUMO, then ( °red E°ox) will vary as will the energy of the electronic transition. In such cases a linear correlation of °red or E°0x may result. In the limit the energy of the HOMO, or more usually the LUMO, will be unaffected by structural perturbation where the acceptor orbital is pinned, direct linear correlation of E°Gx with v should be apparent. With E°ox and v in a common energy unit, the plot E°0x versus v should have a slope close to one.33-36... 

Amorphous single-domain CnTuZr core- having ALO. interlayers where the C oTaZr thickness is from 11.23 0.9 pin. depending on the number of layers, and ALOi is IJ.tJl qun Ulick. were evaluated for use as ihin-lilm heads. This material combination is attractive for low noise heads operating at frequencies up to 40 MHz... 

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