Photoresist, inorganic

Ch oline in the form of choline base (hydroxide) is a strong organic base with a pH of approximately 14. This product can have industrial apphcations where it is important to replace inorganic bases with organic materials. Ch oline base is currently used in the formulation of photoresist stripping products for use in the printed wire board industry. Dilute aqueous solutions (5%) of ch oline base that have very low concentrations of metallic ions have been utilized for apphcations in the semiconductor industry. 

Hence, Tct is seen to increase with pore density and pore radius. However, a problem appears at a porous substrate when thin films are to be deposited during metallization to form interconnections, thin-film capacitors, etc.335 Sputtered material falls deep into the pores, which affects the planarity of the deposited layer and the electrical resistivity of the oxide layer underneath.335 To cope with this effect, the porous oxide should be padded by inorganic (A1203 and Si02) or organic (polyimide, negative photoresist) layers. 

In the fabrication process of ultra-fine patterns for photoresists using ArF light source (193 nm), few organic or inorganic anti-reflective coating currently exist. This art addresses this need using poly(maleic anhydride-co-4-dihydro-l,4-methano-naph-thalene-5,8-diol) diacetate crosslinked with poly(styrene-co-vinyl dimethylacetal). 

Inorganic photoresists constitute a new promising class of the photosensitive materials. 

The use of inorganic photoresists should be advantageous for the technological processes because inorganic Aims can be deposited very homogeneously by a CVD procedure. 

Kaliteevskaya, N.A. Seisyan, R.P. Contrast enhancement in image transfer via interaction of UV radiation with inorganic photoresist films. Semiconductor 2001, 35 (2), 226-229. 

A. Yoshikawa, O. Ochi, H. Nagai, and Y. Mizushima, A novel inorganic photoresist utihzing Ag photodoping in Se Ge glass films, Appl. Phys. Lett. 29, 677 (1976). 

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