Photoelectric Gain and Noise of Extraction Photodiode

39 Spatial distribution of photoelectric gain in a p jm extraction diode for different bias levels 

Such result for extraction diodes was reported theoretically by Kotrowski et al. [382], and experimentally by Elliott et al. [362] and Skauli et al. [383]. Elliott et al. explained the appearance of E larger than 1 as a consequence of Auger generation (impact ionization), as well as that of the influence of redistribution of carriers within biased detector to the total conductivity of the device (the effect of mixed conductivity). 

The next diagram, Fig. 3.40, shows spatial distribution of noise density factor (product of the sum of absolute values of generation and recombination rates and squared photoelectric gain, ( G + i )r.  

3 Charge Camer Management (Thermal Noise Engineering) 

The influence of the n zone to the total noise level in extraction devices is large, and bias increase even increases this influence. However, additional doping of this zone can be used to minimize the influence of g-r processes on the n jt junction. 

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