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Auger generation

In order to present some basic expressions for the Auger lifetime let us denote Auger generation (impact ionization) rate as Ga and Auger recombination rate as Ra- We consider first the Auger 1 process. Since two electrons and one hole take part in it, the recombination rate will be proportional to n p... [Pg.24]

We will assume that the temperature in the expressions for Auger generation and recombination (as given in Sects. 1.4.2 and 1.4.6) actually represents carrier temperature. The increase of external fields above the hmit of hot carrier effects means an increase of Auger generation. At the same time expressions for it as quoted in Sect. 1.4 cease to be valid. [Pg.136]

The influence of electric field to the increase of Auger generation can be calculated starting from the Beattie-Landsberg expression for Auger 1 intrinsic recombination lifetime x ... [Pg.136]

If we differentiate the Auger generation rate over electron temperature, we obtain... [Pg.137]

The main reason of the improvement of characteristics is a decreased operating temperature, but there is also a contribution from the shape of the transition region between the low-doped and the highly doped region, because milder transitions decrease the effects of exclusion. This can be seen if a comparison is made with the electron concentration curve obtained for the same dopant profile as in the case in Fig. 3.10. It is intuitively clear that the same effect will be caused by residual Auger processes (primarily Auger generation), and it is also visible from the analytical expression (3.87). [Pg.165]

Figures 3.12 and 3.13 show spatial distributions of Auger generation and recombination rates along an n mercury cadmium teUuride exclusion device at a nearroom temperature. The cadmium molar fraction was 0.205. The detector dimensions and doping profile were identical to those of the gradient structure described in Sect. 3.5.5. Figures 3.12 and 3.13 show spatial distributions of Auger generation and recombination rates along an n mercury cadmium teUuride exclusion device at a nearroom temperature. The cadmium molar fraction was 0.205. The detector dimensions and doping profile were identical to those of the gradient structure described in Sect. 3.5.5.
Fig. 3.12 Spatial distribution of Auger generation rate along the length of the exclusion region of an Hgi-xCdj[Te n v detector with a gradient junction at 295 K for various bias voltages... Fig. 3.12 Spatial distribution of Auger generation rate along the length of the exclusion region of an Hgi-xCdj[Te n v detector with a gradient junction at 295 K for various bias voltages...
Fig. 3.33 Spatial dependence of Auger generation rate in a reverse biased extraction-exclusion HgCdTe photodiode at 250 K for different values of bias voltage... Fig. 3.33 Spatial dependence of Auger generation rate in a reverse biased extraction-exclusion HgCdTe photodiode at 250 K for different values of bias voltage...
According to the calculated levels of g-r processes it is concluded that within the range of the chosen material parameters the prevailing process is remaining Auger generation. Total generation-recombination is primarily determined by this process. [Pg.188]

Such result for extraction diodes was reported theoretically by Kotrowski et al. [382], and experimentally by Elliott et al. [362] and Skauli et al. [383]. Elliott et al. explained the appearance of E larger than 1 as a consequence of Auger generation (impact ionization), as well as that of the influence of redistribution of carriers within biased detector to the total conductivity of the device (the effect of mixed conductivity). [Pg.191]

The nonequilibrium methods are the other part of the reply to the question of noise suppression. They proved themselves a means to suppress Auger recombination, but also for a significant part the Auger generation as well. Each... [Pg.232]

Z. Djuric, Z. Jaksic, A. Vujanic, J. Piotrowski, Auger generation suppression in narrow-gap semiconductors using the magnetoconcentration effect. J. Appl. Phys. 71(11), 5706-5708 (1992)... [Pg.237]


See other pages where Auger generation is mentioned: [Pg.17]    [Pg.24]    [Pg.129]    [Pg.129]    [Pg.131]    [Pg.133]    [Pg.139]    [Pg.167]    [Pg.186]    [Pg.197]    [Pg.207]    [Pg.208]    [Pg.274]    [Pg.274]    [Pg.274]    [Pg.304]   
See also in sourсe #XX -- [ Pg.129 , Pg.136 , Pg.165 , Pg.186 , Pg.188 ]




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