Philips Electronics

Principal producers of ferroelectric capacitors are (110) Murata Manufacturing Co., Ltd., Kyoto, Japan Kyocera Corp., Kyoto, Japan Philips Electronics, N.V., Eindhoven, the Netherlands and NEC Corp., Tokyo, Japan. Principal piezoelectric ceramic component producers are (110) Murata Manufacturing Co., Ltd., Kyoto, Japan Motorola, Inc., Schaumburg, lU. EDO Corp., College Point, N.Y. Morgan Matroc, Inc., Bedford, Ohio Kyocera Corp., Kyoto, Japan and Philips Electronics, N.V., Eindhoven, the Netherlands. 

D. B. Williams. Practical Analytical Electron Microscopy in Materials Science. Philips Electronic Instruments, Mahwah, NJ, 1984. Concise textbook on CBED, EDS, and EELS with a pronounced how-to flavor. 

Fig. 7-7. (a) The Philips Electronics (Norelco) Inverted-Sample Three-Position... 

Spectrograph. (Courtesy of Philips Electronics, Inc.) (b) Schematic drawing of the optics of one channel of the inverted-sample spectrograph. (Courtesy of Tomaino and De Pietro, Norelco Reptr., 3, 57.)... 

P-10 gas, 45, 219 Pair production, 290 Palladium, determination by x-ray emission spectrography, 328 Particle size, effect of variations of, in mineral analysis, 200 Philips Autrometer, 252-256, 280 Philips Electronics gas analyzer, 135 Philips Electronics improved Coolidge tubes, 248, 252, 253... 

Philips Electronics Inverted-Sample Three-Position Spectrograph, 192, 193, 241... 

Bangert, H., Wagendrizted, A, Aschinger, H. Philips Electron Optics Bull., 119,17, 1983... 

Williams, D. B. "Practical Analytical Electron Microscopy in Materials Science," Philips Electronic Instruments Electron Optics Publishing, Mahwah, N.J., 1984. 

Philips Domestic Appliances and Personal Care (Philips DAP) is one of the product divisions of Royal Philips Electronics, alongside Consumer Electronics, Lighting and Medical Systems. In this article we will focus on sensors that are needed within the DAP division. Philips DAP has four Business Units, each with its own specific field of interest Shaving Grooming, Body Beauty Health, Food Beverage and Home Environment Care. 

PhEI Philips Electronics, Inc, (nitromethane ethylene-diamine)... 

In GB-A-160S321 (Philips Electronic and Associated Industries Limited, GB, 19.07.89) devices using a plurality of read-out means are disclosed. 

In EP-A-0061802 (Philips Electronic and Associated Industries, GB, 06.10.82) the sensitivity is increased by forming a meandering drift path in the read-out area. 

In EP-A-0007667 (Philips Electronic and Associated Industries Limited, GB, 06.02.80) detector elements of an imager comprise mesas to which side-wall electrodes are formed. This structure permits a significant proportion of the current flows to pass across the bulk of the mesas between their side-walls and not adjacent their top surfaces where the carrier recombination velocity may be higher. 

The photodiodes presented in GB-A-2241605 (Philips Electronic and Associated Industries Limited, GB, 04.09.91) have their pn-junctions located in planes which intersect two opposite major faces as well as two side faces of the diode bodies. The dimensions of the diode bodies can be made small to avoid the provision of excess body material around the pn-junction planes thereby reducing thermal generation of carriers which would contribute significant noise to the photodiode signals. 

In GB-A-2241377 (Philips Electronics and Associated Industries Limited, GB, 28.08.91) an imager is presented which is hardened against ionizing radiation by forming each detector element as a very small separate body of the kind disclosed in GB-A-2241605 presented above. 

A method to convert a region of a p-type HgCdTe body to n-type by the use of ion-etching is presented in EP-A-0062367 (Philips Electronic and Associated Industries Limited, GB, 13.10.82). A high concentration of mercury is produced from an etched-away part of the body as to act as a dopant source. The method is used to form a detector device. 

The lattice mismatch between silicon and mercury cadmium telluride makes it difficult to grow an epitaxial crystalline layer of mercury cadmium telluride on silicon. In EP-A-0343738 (Philips Electronic and Associated Industries Limited, GB, 29.11.89) an imager is formed by growing mercury cadmium telluride on a sapphire substrate at openings formed in a silicon layer which has been grown on the sapphire substrate (silicon-on-sapphire, SOS) at an earlier stage. 

The device may be formed by depositing alternating layers of cadmium telluride and mercury telluride by vapour phase deposition techniques and interdiffuse the layers, either during growth or subsequently, so as to form a mercury cadmium telluride layer. Reference is made to GB-A-2146663 (The Secretary of State for Defence, GB, 24.04.85) and GB-A-2203757 (Philips Electronic and Associated Industries Limited, GB, 26.10.88). 

Two or more HgCdTe layers having different bandgaps are formed as different levels on a read-out substrate in EP-A-0475525 (Philips Electronic and Associated Industries Limited, GB, 18.03.92) to provide different wavelength response. The individual detectors are connected by the same method as described in EP-A-0061803 above. 

The shorter-wavelength photodiode 10 and the longer-wavelength photodiode 20 of the imager presented above in EP-A-0475525 are placed side-by-side and not on top of each other. The signals from the photodiodes will therefore not refer to the same source from a scene projected on the imager. This problem is solved in EP-A-0481552 (Philips Electronics UK Limited, GB, 22.04.92) by the use of infrared lenses placed on the imager. 

EP-A-0561615 (Philips Electronics UK Limited, GB, 22.09.93) teaches how to form an electrical connection on a side-wall, and only on the side-wall, of a step structure. This technique is used to form a compact two-wavelength imager. 

Applicant Philips Electronic and Associated Applicant Semiconductor Research ... 

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