Pentacene transistors

Saudari SR, Frail PR, Kagan CR (2009) Ambipolar transport in solution-deposited pentacene transistors enhanced by molecular engineering of device contacts. Appl Phys Lett 95 023301... 

Saudari SR, Lin Y-J, Lai Y, Kagan CR (2010) Device configurations for ambipolar transport in flexible pentacene transistors. Adv Mater 44 5063-5068... 

Fig. 8.13. PET test chip with pentacene transistors and circuits.

Nunes et al. wanted to find out whether transistors made with PHS and other organic dielectrics could show the excellent performance already reported for the pentacene transistors. This will help to determine whether other polymers with improved characteristics can be found. They investigated the effect of PHS on important device characteristics, threshold voltage and subthreshold slope. The dielectrics they investigated and their dielectric properties are shown in Fig. 6.22. Measured mobilities in transistors fabricated... 

Nelson, S. F., Lin, Y.Y., Gundlach, D.J., and Jackson, T.N., Temperature-independent transport in high-mobility pentacene transistors, Appl. Phys. Lett, 72, 1854, 1998. 

Volkel, A., Street, R., and Knipp, D., Carrier transport and density of state distributions in pentacene transistors, Phys. Rev. B. 66, 195336, 1-7, 2002. 

Steudel, S. et al.. Influence of the dielectric roughness on the performance of pentacene transistors, Appl. Phys. Lett. 85, 4400-4402, 2004. 

Granstrom, J. and Katz, H.E., Pentacene transistors with polymer gate dielectrics on metallized optical fibers, J. Mater. Res. 19 (12), 3540-3546, 2004. 

FIGURE 5.5.23 Current-voltage characteristics of a typical laminated nanoscale pentacene transistor (W 20 pm and L 150 nm). Inset scanning electron micrograph of the channel region defined by the recessed region of the PDMS stamp. (From J. Zaumseil et ah, Appl. Phys. Lett, 82, 793, 2003.)... 

FIGURE 6.2.11 Sensing data of pentacene transistors upon exposure to 1-pentanol normalized / under the condition of Vg = V = -25 V, v = 45 ml/min and d = 2 mm for different microscale channel lengths, with average pentacene grain size of 140 nm (a) and 1 am (b). (From Wang, L. et ah, Appl. Phys. Lett., 85, 6386, 2004. With permission. Copyright 2004, American Institute of Physics.)... 

Joung et al. [29] have also demonstrated the possibility of combining these sensors with pentacene-based thin film transistors as temperature sensors. The strain sensor consists of a Wheatstone bridge structure where the pentacene film acts as sensing layer of a strain gauge, while the temperature sensors consist of bottom-contact pentacene transistors in which the variations of the drain currents in the subthreshold regime are measured with respect to temperature. 

The effects of strain on pentacene transistor characteristics while changing the bending radius of the structure have been investigated by Sekitani et al. [30], A cross section of their device structure is shown in Fig. 6.13. 

Fig. 14 (a) Steady state characteristics of pentacene transistors on silicon dioxide dielectric, (b) Transient response of pentacene transistors on silicon dioxide dielectric, (c) Pentacene drift and DC mobilities for fabrication scheme B (L = 7.5 pm)... 

Kelley TW (2006) High-performance pentacene transistors. In Klauk H (ed) Organic electronics. Materials, manufacturing and applications. Wiley, Weinheim, pp 35-57... 

Zhang Y, Petta JR, Ambily S, Shen Y, Ralph DC, Malliaras GG (2003) 30 nm channel length pentacene transistors. Adv Mater 15 1632-1635... 

Lee JB, Chang PC, Liddle A, Subramanian V (2005) 10-nm channel length pentacene transistors. IEEE Trans Electron Dev 52 1874-1879... 

Kitamura M, Arakawa Y (2007) Low-voltage-operating complementary inverters with C60 and pentacene transistors on glass substrates. Appl Phys Lett 91 053505... 

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