Oxidation of silicon carbide

Small changes in impurity content did not affect this rate but the presence of water vapor and changes in partial pressure of oxygen were critical (61,62). Steam and various impurities and binders also affect the oxidation of silicon carbide (63). Differences have been observed in oxygen adsorption on the different SiC crystal faces (64). 

Schneider, B., Guette, A., Naslain, R., Cataldi, M., Costecalde, A., 1998), Atheoretical and experimental approach to the active-to-passive transition in the oxidation of silicon carbide , J. Mater. Sci., 33, 535-547. 

A temperature resistant binder is necessary to bond SiC-bricks (carborundum bricks). Clays or other silicates are usually used, the particles being bonded by a glass phase. The bricks must be fired at ca. 1500°C in an oxidizing atmo.sphere to reduce the reduction of bonding clay to silicon and thereby prevent the bricks becoming brittle. The resulting oxidation of silicon carbide is limited by the formation of a passivation layer of Si02 on the SiC particles. 

Wang, P. S., Malghan, S. G., Hsu, S. M., and Wittberg, T. N., Surface oxidation of silicon carbide platelets as studied by x-ray photoelectron spectroscopy and bremsstrahlung-excited Auger electron spectroscopy. Surf. Interfac. Anal., 18, 159 (1992). 

Kizling, M. B., Gallas, J. P., Binet, C., and Lavalley, J. C., Surface oxidation of silicon carbide Quantitative measurement and Rh effect. Mater. Chem. Phys., 30, 273 (1992). 

Figure 21.10 Reprinted from Guinel, M. J-F. and Norton, M.G. (2006) Oxidation of silicon carbide and the formation of silica polymorphs, J. Mater. Res. 21, 2550. With permission from the Materials Research Society.

A theoretical and experimental approach to the active-to-passive transition in the oxidation of silicon carbide./. Mater, Sci, 33, 535-547. 

K.L. Luthra, Some New Perspective on Oxidation of Silicon Carbide and Silicon Nitride, JAm.Ceram.Soc., 74(5), 1095-1103 (1991). 

HYDROTHERMAL OXIDATION OF SILICON CARBIDE AND ITS BEARING ON WET WEAR MECHANISMS... 

Hydrothermal Oxidation of Silicon Carbide and its Bearing on Wet Wear Mechanisms... 

Luthra, K.L., Some new perspectives on oxidation of silicon carbide and silicon nitride. Journal of the American Ceramic Society, 1991. 74(5) 1095-1103. 

T. Narushima, T. Goto, T. Hirai and Y. Iguchi, High-Temperature Oxidation of Silicon Carbide and Silicon Nitride, Mater. Trans.., JIM, 38, 821-835 (1997). 

Berton, B., Bacos, M. P., Demange, D., Lahaye, J. (1992). High-temperature oxidation of silicon carbide in simulated atmospheric re-entry conditions. Journal of Materials Science, 27, 3206-3210. doi 10.1007/ BFOl 116013. 

Namshima T, Goto T, Hirai T, Iguchi Y, High-temperatnre oxidation of silicon carbide and silicon nitride , Mater Trans, JIM, 1997 38(10) 821-835. 

Jorgensen P J, Wadworth M E, Culter IB, Effects of oxygen partial pressure on the oxidation of silicon carbide , J Am Ceram Soc, 1960 43(4) 209-212. 

Figzer E, Ebi R, Kinetic studies on the oxidation of silicon carbide , Silicon Carbide - 1973, University of South Carolina Press, Columbia, SC, 1973, 320-328. 

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