Optical silicon carbides

The first type of polycarbosilane synthesized by using ADMET methodology was a poly[carbo(dimethyl)silane].14c Linear poly(carbosilanes) are an important class of silicon-containing polymers due to their thermal, electronic, and optical properties.41 They are also ceramic precursors to silicon carbide after pyrolysis. ADMET opens up a new route to synthesize poly(carbosilanes), one that avoids many of the limitations found in earlier synthetic methods.41... 

The very first question that comes to mind when dealing with giant telescopes is the cost-effective feasibility of its optics. Assuming classical materials for the segments blanks, however, there is no need for a very substantial increase in production capacity from existing suppliers provided that the segment size remains below 2-m. Moderately lightweight Silicon Carbide is also considered as a serious and potentially cost-effective candidate, for its superior thermal performance and specific stiffness. 

Non-oxide ceramics such as silicon carbide (SiC), silicon nitride (SijN ), and boron nitride (BN) offer a wide variety of unique physical properties such as high hardness and high structural stability under environmental extremes, as well as varied electronic and optical properties. These advantageous properties provide the driving force for intense research efforts directed toward developing new practical applications for these materials. These efforts occur despite the considerable expense often associated with their initial preparation and subsequent transformation into finished products. 

PolyCy-benzyl L-glutamate) (PBLG), 15 109 Poly(y-ketosulfide)s, optically active, 23 711 Poly(P-alanine), 1 292 Poly-P-hydroxybutyrate (PHB), 12 482 Polybetaines, 20 479-482 applications of, 20 482 preparation of, 20 480-481 solution properties of, 20 481-482 synthesis of, 20 479-481 Polyborates, 4 256-258 Polyborosiloxanes, in silicon carbide manufacture and processing, 22 533 Polybrominated diphenyl ethers (PBDEs), 13 142-143 20 56... 

Polysilanes can be regarded as one-dimensional analogues to elemental silicon, on which nearly all of modern electronics is based. They have enormous potential for technological uses [1-3]. Nonlinear optical and semiconductive properties, such as high hole mobility, photoconductivity, and electrical conductivity, have been investigated in some detail. However, their most important commercial use, at present, is as precursors to silicon carbide ceramics, an application which takes no advantage of their electronic properties. 

Polysilanes. Following the first reports of soluble and processable polysilanes in the late 1970s, these macromolecules have attracted substantial interest from both fundamental and applied perspectives." The backbone of silicon atoms gives rise to unique electronic and optical properties as a result of the delocalisation of a-electrons. Several polysilanes have also been found to function as useful thermal precursors to silicon carbide fibres and these materials have also attracted attention with respect to microlithographic applications and as polymerisation initiators." ... 

Optical absorption measurements give band-gap data for cubic silicon carbide as 2.2 eV and for the CC-form as 2.86 eV at 300 K (55). In the region of low absorption coefficients, optical transitions are indirect whereas direct transitions predominate for quantum energies above 6 eV. The electron affinity is about 4 eV. The electronic bonding in silicon carbide is considered to be predominantly covalent in nature, but with some ionic character (55). In a Raman scattering study of valley-orbit transitions in 6H-silicon carbide, three electron transitions were observed, one for each of the inequivalent nitrogen donor sites in the silicon carbide lattice (56). The donor ionization energy for the three sites had values of 0.105, 0.140, and 0.143 eV (57). 

Radiation Effects. Alpha silicon carbide exhibits a small degree of anisotropy in radiation-induced expansions along the optical axis and perpendicular to it (58). When diodes of silicon carbide were compared with silicon diodes in exposure to irradiation with fast neutrons (59), an increase in forward resistance was noted only at a flux about 10 times that at which the increase occurs in a silicon diode. In general, it appears that silicon carbide, having the more tighdy bound lattice, is less damaged by radiation than silicon. 

The analysis of silicon carbide involves identification, chemical analysis, and physical testing. For identification, x-ray diffraction, optical microscopy, and electron microscopy are used (136). Refinement of x-ray data by Rietveld analysis allows more precise determination of polytype levels (137). 

Photomultipliers -cesium in [CESIUMAND CESIUM COMPOUNDS] (Vol5) -m infrared technology [INFRARED TECHNOLOGY AND RAMAN SPECTROSCOPY - INFRARED TECHNOLOGY] (Vol 14) -for optical spectroscopy [SPECTROSCOPY, OPTICAL] (Vol 22) -silicon carbide m [CARBIDES - SILICON CARBIDE] (Vol 4) -use m kinetic measurements [KINETIC MEASUREMENTS] (Vol 14) -usem optical spectroscopy [SPECTROSCOPY, OPTICAL] (Vol 22)... 

Microstructures of the two siliconized silicon carbide materials, (a) SiC-C and (b) SiC-S, observed with reflected light under an optical microscope, showing different reflective indexes between Si (light) and SiC (dark). 

The research at MIT has been done in the cold-wall vertical tube reactor shown in Figure 14. The wafer is aligned almost parallel to the flow on a vertical silicon carbide-coated susceptor. The wafer is heated by optical radiation from high-intensity lamps to a temperature of 775°C. Silane was introduced... 

Care has to be taken in selecting materials for the die and punches. Metals are of little use above 1000 °C because they become ductile, and the die bulges under pressure so that the compact can only be extracted by destroying the die. However, zinc sulphide (an infrared-transparent material) has been hot pressed at 700 °C in stainless steel moulds. Special alloys, mostly based on molybdenum, can be used up to 1000 °C at pressures of about 80 MPa (5 ton in-2). Alumina, silicon carbide and silicon nitride can be used up to about 1400 °C at similar pressures and are widely applied in the production of transparent electro-optical ceramics based on lead lanthanum zirconate as discussed in Section 8.2.1. 

An experiment with a dilute ceramic suspension was made as follows A very small quantity of silicon carbide particles (d 6 /xm) was dissolved in silicon oil ( 350mPas). The suspension was pumped at high pressure through a glass capillary (d = 0.6 mm). The experimental setup is shown in Fig. 3. The velocities of the silicon carbide particles in the capillary are detected by an optical sensor. From these data, the statistics of the particles velocities is calculated. Due to the optical properties of the sensor, the particles are only detected in a wedge-like sector of the cross-section of the capillary. The measured velocity distribution of the particles (Fig. 4) depends on the shape of this sector and, additionally, on the measuring tolerances of the sensor. 

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