Optical random access memory

Cuilum, B. M., Mobley, J., Bogard, J. S., Moskovitch, M., Phillips, G. W., and Vo-Dihn, T. Three-dimensional optical random access memory materials for use as radiation dosimeters. And/. Chem. 2000, 72, 5612-5617. 

Birge, R.R., Zhang, C.F., and Lawrence, A.F., Optical random access memory based on bacteriorhodopsin, in Molecular Electronics, Hong, E, Plenum Press, New York, 1989, pp. 369-379. 

Chemical and physical processing techniques for ferroelectric thin films have undergone explosive advancement in the past few years (see Ref. 1, for example). The use of PZT (PbZri- cTi c03) family ferroelectrics in the nonvolatile and dynamic random access memory applications present potentially large markets [2]. Other thin-film devices based on a wide variety of ferroelectrics have also been explored. These include multilayer thin-film capacitors [3], piezoelectric or electroacoustic transducer and piezoelectric actuators [4-6], piezoelectric ultrasonic micromotors [7], high-frequency surface acoustic devices [8,9], pyroelectric intrared (IR) detectors [10-12], ferroelectric/photoconduc-tive displays [13], electrooptic waveguide devices or optical modulators [14], and ferroelectric gate and metal/insulator/semiconductor transistor (MIST) devices [15,16]. 

Abbreviations OE, optoelectronic DRAM, dynamic random access memory I/O, input/output ATM, asynchronous transfer mode VLSI, v y large scale integration ASIC, application-specific integrated circuit. [From Pinkston, T. M., and Kuznia, C. (1997). Smart-Pixel-Based Netwa-k Interface Chip, App/. Optics 36(20), 4871-4880.]... 

The present 10 volume handbook has a much broader scope. It includes semiconductor materials, quantum wells and quantum dots, liquid crystals, conducting polymers, laser materids, photoconductors, electroluminescent and photorefractive materials, nanostructured, supramolecular, and self-assembled materials, ferroelectrics, and superconductors. Applications of these materials in photoconductors, optical fibers, xerography, solar cells, dynamic random access memory, and sensors are described. The Handbook contains contributions by 180 leading experts from 25 different countries. It truly represents the worldwide research efforts and results that support the global market of optoelectronics. All scientific and technical workers in this broad field are indebted to the contributing authors, the editor and Academic Press for publishing this comprehensive handbook for the new millennium. It will support further growth in a field that already has surpassed my wildest expectations of 40 years ago. 

D random access optical memory photochromic effect (two-photon absorptivity) BR (wild type) [33,52-54]... 

RAM is a form of computer data storage. RAM takes the form of ICs that allow stored data to be accessed in any order (i.e., at random). The word random thus refers to the fact that any piece of data can be returned in a constant time, regardless of its physical location and whether or not it is related to the previous piece of data. RAM is a volatile type of memory, where the information is lost after the power is switched off. By contrast, storage devices such as magnetic discs and optical discs rely on the physical movement of the recording medium or a reading head. In these devices, the movement takes longer than data transfer, and the retrieval time varies based on the physical location of the next item. 

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