Optical polycrystalline

The obvious application of microfocus Raman spectroscopy is the measurement of individual grains, inclusions, and grain boundary regions in polycrystalline materials. No special surface preparation is needed. Data can be obtained from fresh fracture surfeces, cut and polished surfaces, or natural surfeces. It is also possible to investigate growth zones and phase separated regions if these occur at a scale larger than the 1-2 pm optical focus limitation. 

These model compounds can also be used in device fabrication, since thin films of appropriate thickness can be obtained by sublimation and subsequent deposition onto a substrate in vacuum. Electrical as well as optical properties of such devices have turned out to be strongly dependent on both the molecular packing within the crystallites and the polycrystalline morphology. Understanding and control of this aspect is one of the current scientific challenges. 

The random laser is a simple optical system in which the strong optical scattering in the random medium forms an optical recurrent path. Recent reports on random lasers have described the emission of laser light by metal-oxide polycrystalline and micrometer-sized particles [46]. Because of its structural simplicity and small size, the single random laser is a promising miniature light source for optical devices, such as waveguides and optical switches. 

The potentiostatic electrodeposition of iron selenide thin films has been reported recently in aqueous baths of ferric chloride (FeCb) and Se02 onto stainless steel and fluorine-doped TO-glass substrates [193], The films were characterized as polycrystalline and rich in iron, containing in particular a monoclinic FesSea phase. Optical absorption studies showed the presence of direct transition with band gap energy of 1.23 eV. 

It was reported recently [216] that optical-quality PbTe thin films can be directly electrodeposited onto n-type Si(lOO) substrates, without an intermediate buffer layer, from an acidic (pH 1) lead acetate, tellurite, stirred solution at 20 °C. SEM, EDX, and XRD analyses showed that in optimal deposition conditions the films were uniform, compact, and stoichiometric, made of fine, 50-100 nm in size, crystallites of a polycrystalline cubic structure, with a composition of 51.2 at.% Pb and 48.8 at.% Te. According to optical measurements, the band gap of the films was 0.31 eV and of a direct transition. Cyclic voltammetry indicated that the electrodeposition occurred via an induced co-deposition mechanism. 

The optical properties of electrodeposited, polycrystalline CdTe have been found to be similar to those of single-crystal CdTe [257]. In 1982, Fulop et al. [258] reported the development of metal junction solar cells of high efficiency using thin film (4 p,m) n-type CdTe as absorber, electrodeposited from a typical acidic aqueous solution on metallic substrate (Cu, steel, Ni) and annealed in air at 300 °C. The cells were constructed using a Schottky barrier rectifying junction at the front surface (vacuum-deposited Au, Ni) and a (electrodeposited) Cd ohmic contact at the back. Passivation of the top surface (treatment with KOH and hydrazine) was seen to improve the photovoltaic properties of the rectifying junction. The best fabricated cell comprised an efficiency of 8.6% (AMI), open-circuit voltage of 0.723 V, short-circuit current of 18.7 mA cm, and a fill factor of 0.64. 

Yagi I, Lantz JM, Nakabayashi S, Corn RM, Uosaki K (1996) In situ optical second harmonic generation studies of electrochemical deposition of tellurium on polycrystalline gold electrodes. J Electroanal Chem 401 95-10... 

An alternative means of obtaining high guest optical purities is simply to add a powdered single crystal of the TOT inclusion compound to a saturated solution of TOT in the racemic solvent. Thus, use of the resolved F6, TOT/2-bromooctane inclusion compound as a seed gave polycrystalline material with an enantiomeric purity of 85% 11S>. 

One problem with methods that produce polycrystalline or nanocrystalline material is that it is not feasible to characterize electrically dopants in such materials by the traditional four-point-probe contacts needed for Hall measurements. Other characterization methods such as optical absorption, photoluminescence (PL), Raman, X-ray and electron diffraction, X-ray rocking-curve widths to assess crystalline quality, secondary ion mass spectrometry (SIMS), scanning or transmission electron microscopy (SEM and TEM), cathodolumi-nescence (CL), and wet-chemical etching provide valuable information, but do not directly yield carrier concentrations. 

Cadmium acetate and sodium tellurite solutions have similarly been used to grow CdTe films by SILAR. The films were polycrystalline (hexagonal), and the grain size was on the order of 22nm (film thickness 272nm). The optical band gap was 1.41 eV.85... 

One way to make the short-lived intermediates amenable to study is to increase their lifetime, usually by irradiation in the solid state and/or at very low temperatures. Then, the intermediates can be detected at the end of the irradiation by ESR or optical absorption spectroscopy. The ESR study of radicals in the solid state is done on single crystals, polycrystalline samples or frozen aqueous solution. In case of polycrystalline samples or frozen aqueous solution the identification of the radicals from the ESR spectra is difficult in many cases and, for better identification, the ESR experiment should be conducted on irradiated single crystals. Later, the method of spin trapping, developed for the liquid phase5, was extended to polycrystalline solids. In this technique the polycrystalline solids are /-irradiated and subsequently dissolved in a solution containing the spin trap. 

In Chapter 5.4, optical ultraviolet radiation sensors are described, including UV-enhanced silicon-based pn diodes, detectors made from other wide band gap materials in crystalline or polycrystalline form, the latter being a new, less costly alternative. Other domestic applications are personal UV exposure dosimetry, surveillance of sun beds, flame scanning in gas and oil burners, fire alarm monitors and water sterilization equipment surveillance. 

When metals have Raman active phonons, optical pump-probe techniques can be applied to study their coherent dynamics. Hase and coworkers observed a periodic oscillation in the reflectivity of Zn and Cd due to the coherent E2g phonons (Fig. 2.17) [56]. The amplitude of the coherent phonons of Zn decreased with raising temperature, in accordance with the photo-induced quasi-particle density n.p, which is proportional to the difference in the electronic temperature before and after the photoexcitation (Fig. 2.17). The result indicated the resonant nature of the ISRS generation of coherent phonons. Under intense (mJ/cm2) photoexcitation, the coherent Eg phonons of Zn exhibited a transient frequency shift similar to that of Bi (Fig. 2.9), which can be understood as the Fano interference [57], A transient frequency shift was aslo observed for the coherent transverse optical (TO) phonon in polycrystalline Zr film, in spite of much weaker photoexcitation [58],... 

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