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Optical absorption and

For a simplified case, one can obtain the rate of CL emission, =ft GI /e, where /is a function containing correction parameters of the CL detection system and that takes into account the fact that not all photons generated in the material are emitted due to optical absorption and internal reflection losses q is the radiative recombination efficiency (or internal quantum efficiency) /(, is the electron-beam current and is the electronic charge. This equation indicates that the rate of CL emission is proportional to q, and from the definition of the latter we conclude that in the observed CL intensity one cannot distii pish between radiative and nonradiative processes in a quantitative manner. One should also note that q depends on various factors, such as temperature, the presence of defects, and the... [Pg.151]

It should be noted that during CL observations intensity variations may arise due to sample morphology (e.g., surface roughness), which may lead to nonuniform excitation and to local variations in optical absorption and reflecdon losses. [Pg.158]

In the following sections, we first show the phonon dispersion relation of CNTs, and then the calculated results for the Raman intensity of a CNT are shown as a function of the polarisation direction. We also show the Raman calculation for a finite length of CNT, which is relevant to the intermediate frequency region. The enhancement of the Raman intensity is observed as a function of laser frequency when the laser excitation frequency is close to a frequency of high optical absorption, and this effect is called the resonant Raman effect. The observed Raman spectra of SWCNTs show resonant-Raman effects [5, 8], which will be given in the last section. [Pg.52]

The substituted five-ring OPVs have been processed into poly crystal line thin films by vacuum deposition onto a substrate from the vapor phase. Optical absorption and photolumincscence of the films are significantly different from dilute solution spectra, which indicates that intermolecular interactions play an important role in the solid-state spectra. The molecular orientation and crystal domain size can be increased by thermal annealing of the films. This control of the microstruc-ture is essential for the use of such films in photonic devices. [Pg.629]

Detectors based on established optical absorption and emission techniques,... [Pg.200]

Xie, J.R.H., Cheung, C.F. and Zhao, J.J. (2006) Tuning Optical Absorption and Emission of Suh-Nanometer Gold-Caged Metal Systems M Auj4hy Substitutional Doping. Journal of Computational and Theoretical Nanoscience, 3, 312—314. [Pg.241]

Two kinds of flash photolysis experiments on the interfacial reactions of electrons and holes have been reported. In the first case, the electrons and holes themselves were detected by their optical absorptions, and in the second case the products of their reactions were traced. [Pg.149]

Heard SM, Grieser F, Barraclough CG, Sanders JV (1983) The characterization of Ag sols by electron microscopy, optical absorption and electrophoresis. J Colloid Interface Sci 93(2) 545-555... [Pg.270]

Sensitivity impacts upon the limit of detection and resolution of the device, making it a key performance parameter. Recently, several strategies have been developed in order to provide sensitivity enhancements for optical sensor platforms based on both optical absorption and fluorescence phenomena. These strategies are the result of rigorous theoretical analyses of the relevant systems and, combined with polymer processing technology and planar fabrication protocols, provide a viable route for the development of low-cost, efficient optical sensor platforms. [Pg.195]

While planar optical sensors exist in various forms, the focus of this chapter has been on planar waveguide-based platforms that employ evanescent wave effects as the basis for sensing. The advantages of evanescent wave interrogation of thin film optical sensors have been discussed for both optical absorption and fluorescence-based sensors. These include the ability to increase device sensitivity without adversely affecting response time in the case of absorption-based platforms and the surface-specific excitation of fluorescence for optical biosensors, the latter being made possible by the tuneable nature of the evanescent field penetration depth. [Pg.213]

The introduction of 2-[4-(dimethylamino)phenylazo]benzoic acid into a silica sol allows the preparation of pH-sensitive doped coatings upon glass substrates. The behavior of this system was evaluated as the function of pH changes in liquid and gas media68. Optical absorption and sensitivity against pH were monitored by Vis spectroscopy. Chemical and mechanical stability tests carried out with coatings demonstrated that they were resistant enough to be use in sensor devices for pH measurements in laboratories. [Pg.368]

Fig. 19 (a) Optical absorption and (b) photoluminescence spectra of CdSe and CdSe QDs capped with different concentration of cytosine. Sample A is as-prepared QDs and Samples B and C are capped QDs. (Adapted from [75])... [Pg.255]

It is useful to view optical absorption and emission processes in such a system in terms of transitions between distinct vibrational levels of the ground and excited electronic states of a metal atom-rare gas complex or quasi-molecule. Since the vibrational motions of the complex are coupled with the bulk lattice vibrations, a complicated pattern of closely spaced vibrational levels is involved and this results in the appearance of a smooth, structureless absorption profile (25). Thus the homogeneous width of the absorption band arises from a coupling between the electronic states of the metal atom and the host lattice vibrations, which is induced by the differences between the guest-host... [Pg.299]

The band gap, determined as the onset of the absorption band in thin films is 2.95 eV (425 nm). Janietz et al. [252] used the onset of the redox waves in CV experiments to estimate the /P and Ea energies of the dialkyl-PFs (Figure 2.11). The gap between the obtained energy levels (5.8 eV for 7P and 2.12 eV for EA) IP—EA 3.8 eV is substantially higher than the optical band gap. Although optical absorption and electrochemistry test two physically different processes (vertical electron excitation and adiabatic ionization) and are not expected to be the same,... [Pg.120]

Optical Absorptions and Charge Transfer States (Englman) Optical Activity, Theoretical Aspects of. I. Small Mole- 8 13... [Pg.402]

Henglein A, Tausch-Treml R (1981) Optical absorption and catalytic activity of subcolloidal and colloidal silver in aqueous solution a pulse radiolysis study. J Colloid Interface Sci 80 84-93... [Pg.329]

Besides the fluorescence coefficient, the optical absorption and scattering coefficients of the sample are the most important parameters in quantative fluorescence spectroscopy of turbid media. In principle two or, if the anisotropy parameter has to be determined, three independent measurements are sufficient to separate the coefficients that appear in all equations as sums or proportions. However, for better accuracy, one of the geometrical parameters (sample thickness, angle of incidence, distance from the irradiated spot) as well as the wavelength of irradiation should be varied over a wide range, and then the data should be fitted with the help of the corresponding model equation. [Pg.243]

The hne-shape function gives the profile of the optical absorption (and emission) band and contains important information about the photon-system interaction. Let us briefly discuss the different mechanisms that contribute to this function, or the different line-broadening mechanisms. [Pg.10]

In order to account for the optical absorption and emission bands of the ABe center, we must first determine its energy levels A, by solving the Schrodinger equation ... [Pg.152]

Let us now deal with the shape of the optical (absorption and emission) bands as a result of the previously discussed strong ion-lattice conpling. For this purpose, we consider a simplified two electronic energy states center, in which the initial i and final / states are both described by harmonic oscillators of the same frequency f and with minima at go and Q q respectively, as shown in Figure 5.12. [Pg.175]

At this point, we are able to predict the low-temperature optical (absorption and emission) band shapes for different coupling strengths (i.e., different Huang-Rhys parameters), as shown in the next example. [Pg.177]

Dimerization causes shifts of optical absorption and emission bands of the order of several hundred cm (cf. Table I). This suggests that the triplet EPR data must be interpreted in terms of exciton and charge transfer effects. In the case of ZnTCP the effect of dim.erization on zfs values can be accounted for on the basis of rapid triplet excitation transfer between essentially unperturbed porphyrin moieties. If the exciton model applies the principal components of the zfs tensor in the dimer (X, , Z ) can be related... [Pg.147]


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