Nitrogen ions

Ion implantation (qv) direcdy inserts nitrogen into metal surfaces. A carefully poHshed and cleaned metal surface at room temperature in a vacuum (-- 0.133 mPa (l-) m Hg)) can be directly implanted with 80-keV nitrogen ions (10) (see Metal surface treatments, case hardening). In an alternative synthesis, argon ions (Ar ) of 8 keV can be used to ionize gas-phase nitrogen to obtain the same results (17). 

We further expect hydrogen bonds between nitrogen and four surrounding fluorine ions. The fluorine ions should be approximately tetrahedrally arranged about the nitrogen ion, at a distance of about 2.63 A, as in NHtF. 

From the foregoing discussion, one may suggest that nitrogen ions play the dominant role in the a-C(N) H deposition process. Stronger evidence of this suggestion may only be obtained by more detailed research on this theme, such as the measurement of the absolute sticking factors of the species involved. 

The isotope Es-246 may be synthesized in a cyclotron by bombarding uranium-238 with nitrogen ions ... 

Nitrogen. Nitrogen ions (N+ with energy of 130 KeV) were implanted into CdS deposited from a triethanolamine/ammonia bath [20]. The resistivity of the as-deposited films was ca. 10 O-cm and dropped, depending on ion dose, up to seven orders of magnitude for an ion dose of 10 ion/cm. Even more notable, the conductivity type changed from n-type (the normal type for CdS) to p-type, as measured by hot probe. An acceptor level, 0.6 eV above the valence band, was introduced by the ion implantation. 

The influence of the charge is clearly seen from the fact that H2S is a weak acid as compared with HC1. The weakest acid is NH3 that is, it has such a low tendency to split off H+ ions that the opposite phenomenon nearly always occurs, and it takes up H+ ions to form the NH ion. It will be seen later that this behaviour must be ascribed to the very strong attraction exerted by the tervalent negative nitrogen ion. 

Barium ions carry a 2+ charge, and nitrogen ions carry a 3— charge. What would be the chemical formula for the ionic compound barium nitride ... 

At an acidic pH, the structure shown in (c) is the most likely. This is because the amine group behaves as a base, which means that it will react with the hydronium ions (which are abundant at low pHs) to form the positively charged nitrogen ion. 

Scaling of this laser to higher powers has now been achieved, and additional laser lines have been detected at 391.4 nm and 470.9 nm, arising from the (0,0) and (0,2) vibrational components 432 The experiments of Collins and co-workers utilized a fast-pulsed electron beam gun that injects the beam into a mixture of helium and nitrogen at a pressure of several atmospheres. A similar nitrogen ion laser in which ionization is produced by an electric discharge has also been reported.3 ... 

Scheme 23, Fig. 12). In a second step the borazine is substituted at the resulting nitrogen ion, which is not part of a ring.31,36,49... 

Ion beam deposition employs an ion bombardment onto the substrate with high energetic nitrogen ions. Boron is vaporized as ions (mostly by an electron beam) and shot onto the substrate together with the nitrogen ions. 

This method was used in 1983 by Satou and Fujimoto [204]. Boron was evaporated by an electron beam, and nitrogen ions (40 keV) were shotonto the substrate (Ta, NaCl). The deposited layers had a thickness of 6800 A and the growth rate was up to 100 A/min. 

Fig. 16.6. Predicted NT/NS ratio (solid curve) for three incident angles and measured Knoop hardness as a function of nitrogen ion bombarding energy for carbon nitride film [56]. Hardness data O and obtained from References [18] and [57], respectively.

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