Transport properties nanowires

Landman, U., Luedtke, W.D., Salisbury, B.E. and Whetten, R.L. (1996) Reversible Manipulations of Room Temperature Mechanical and Quantum Transport Properties in Nanowire Junctions. Physical Review Letters, 77, 1362-1365. 

Thomas J. Webster, Nanophase Ceramics The Future Orthopedic and Dental Implant Material Yu-Ming Lin, Mildred S. Dresselhaus, and Jackie Y. Ying, Fabrication, Structure, and Transport Properties if Nanowires... 

Figure 11.2. Nanowire electronic and optical properties, (a) Schematic of an NW-FET used to characterize electrical transport properties of individual NWs. (inset) SEM image of an NW-FET two metal electrodes, which correspond to source and drain, are visible at the left and right sides of the image, (b) Current versus voltage for an n-type InP NW-FET. The numbers inside the plot indicate the corresponding gate voltages (Vg). The inset shows current versus Vg for Fsd of 0.1 V. (c) Real-color photoluminescence image of various NWs shows different color emissions, (d) Spectra of individual NW photoluminescence. All NW materials show a clean band-edge emission spectrum with narrow FWHM around 20nm. (See color insert.)...

It is important to point out that if plating is terminated before solid Au nanowires are obtained, Au nanotubules that span the complete thickness of the template membrane are deposited within the pores. We have shown that these nanotubule membranes have interesting ion [71] and molecular [72] transport properties. This will be subject of the following section. 

The lower carrier density of the 80-nm nanowires compared to bulk bismuth is due to the smaller band overlap in the former. For the 40-nm bismuth nanowires, the carrier density has a temperature dependence similar to bulk bismuth at high temperatures, but it drops rapidly with decreasing temperature at low temperatures. Because the carrier density is highly dependent on wire diameter, the transport properties of bismuth nanowires are expected to be highly sensitive to wire diameter, as will be shown experimentally in the section temperature-dependent resistivity of nanowires. ... 

Liu, K., Chien, C. L., Searson, P. C, and Kui, Y. Z., Structural and magneto-transport properties of electrodeposited bismuth nanowires. Appl. Phys. Lett. 73,1436 (1998a). 

Zhang, Z., Sun, X., Dresselhaus, M. S., Ying, J. Y., and Heremans, J., Electronic transport properties of single crystal bismuth nanowire arrays. Phys. Rev. B 61, 4850 (2000b). 

Transport properties (continued.) semiclassical model, 192-193 temperature-dependent resistivity of nanowires, 193-198 Triplet sites on supports, 63-64 Tungsten species, SiC>2-supported, 63 Turnover numbers (TON), nanostructured materials, 6... 

The chapters in this volume present detailed insights into the synthesis-structure-properties relationships of nanostructured materials. In particular, the catalytic and photocatalytic properties of nanoclusters and nanostructured materials with ultrahigh surface-to-volume ratio are demonstrated. The gas absorption characteristics and surface reactivity of nanoporous and nanocrystalline materials are shown for various separation and reaction processes. In addition, the structural manipulation, quantum confinement effects, transport properties, and modeling of nanocrystals and nanowires are described. The biological functionality and bioactivity of nanostructured ceramic implants are also discussed. 

The transport properties of nanowires are of technological importance and have attracted significant attention in the recent years. Band structure gives simple solution to the analysis of the ballistic transport of periodic nanowires because the number of the bands crossing the Fermi surface is equal the number of quantum of conductance. However, the situation in nanocontacts is more complicated [112],... 

---