Nanowires individual nanowire

K. Ramanathan, M.A. Bangar, M. Yun, W. Chen, A. Mulchandani, and N.V. Myung, Individually addressable conducting polymer nanowires array. Nano Lett. 4, 1237-1239 (2004). 

Figure 11.2. Nanowire electronic and optical properties, (a) Schematic of an NW-FET used to characterize electrical transport properties of individual NWs. (inset) SEM image of an NW-FET two metal electrodes, which correspond to source and drain, are visible at the left and right sides of the image, (b) Current versus voltage for an n-type InP NW-FET. The numbers inside the plot indicate the corresponding gate voltages (Vg). The inset shows current versus Vg for Fsd of 0.1 V. (c) Real-color photoluminescence image of various NWs shows different color emissions, (d) Spectra of individual NW photoluminescence. All NW materials show a clean band-edge emission spectrum with narrow FWHM around 20nm. (See color insert.)...

A method to form metal-SAM-metal nanowires with a diameter < 40 nm was developed by Mallouk and coworkers [51, 76]. The nanowires were produced by electrodeposition of Au or Pd into the nanopores of a polycarbonate membrane. A SAM was formed at the end of the wire and a second metal contact (Au, Ag or Pd) was deposited on top of this. The polycarbonate was subsequently dissolved in dichloromethane, which released a large quantity (1011 cm-2) of nanowires that could be aligned individually between pairs of lithographically fabricated metal electrodes. A schematic illustration of the nanowire molecular junctions is shown in Fig. 10.14. 

The tunable electronic properties of CNTs are being explored for next-generation IC architectures. As you may recall from Chapter 4, traditional Si-based microelectronic devices will likely reach a fundamental limit within the next decade or so, necessitating the active search for replacement materials. Accordingly, an area of intense investigation is molecular electronics - in which the electronic device is built from the placement of individual molecules.Not surprisingly, the interconnects of these devices will likely be comprised of CNTs and other (semi)conductive ID nanostructures such as nanowires. 

The unique combination of rich molecular information (physical and chemical), high spatial resolution, nondestructive nature, and simplicity makes pRS an extremely valuable tool for characterization of nanostructures. As illustrated by numerous examples in this chapter, pRS has been applied to a wide variety of nanostructures. For instance, pRS has emerged to be an indispensible tool in the characterization of low-dimensional carbon nanostructures such as carbon nanotubes and graphene. There are only few recent reports in the literature where pRS has been applied to individual inorganic nanostructures such as ZnO, GaN nanowires to probe the crystalline orientation of the nanostructures in a nondestructive and in-device state. We believe that the application of pRS technique is still in its infancy especially in the context of characterizing individual nanostructures. 

Raman scattering behavior germane to semiconductor nanowires (NWs) and the application of Raman spectroscopy to characterize the structure, composition, strain, and temperature of individual semiconductor nanowires with submicron resolution are discussed. 

Cao LY, Nabet B, Spanier JE (2006) Enhanced Raman scattering from individual semiconductor nanocones and nanowires. Phys Rev Lett 96 157402... 

Prechette J, Carraro C (2006) Diameter-dependent modulation and polarization anisotropy in Raman scattering from individual nanowires. Phys Rev B 74 161404... 

Prechette J, Carraro C (2006) Resolving radial composition gradients in polarized confocal Raman spectra of individual 3 C-SiC nanowires. J Am Chem Soc 128 14774-14775... 

Nishimura C, Imamura G, Fuji M, Kawashima T, Saitoh T, Hayashi S (2008) Raman characterization of Ge distribution in individual Sii cGS c alloy nanowires. Appl Phys Lett 93 203101... 

Imamura G, Kawashima T, Fujii M, Nishimura C, Saitoh T, Hayashi S (2009) Raman characterization of active B-concentration profiles in individual p-type/intrinsic and intrin-sic/p-type Si nanowires. J Phys Chem C 113 10901-10906... 

Doerk GS, Carraro C, Maboudian R (2009) Temperature dependence of Raman spectra for individual silicon nanowires. Phys Rev B 80 073306... 

Fig. 2 shows the fit of I-V characteristics of individual ZnSnOs nanowires measured at 350, 370, 400, and 430 K in the small bias range of a single... 

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